DMN5L06DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features Mechanical Data
Dual N-Channel MOSFET Case: SOT-26
Low On-Resistance Case Material: Molded Plastic, Green Molding
Very Low Gate Threshold Voltage (1.0V max) Compound. UL Flammability Classification Rating 94V-0
Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Fast Switching Speed
Terminals: Finish Matte Tin annealed over Copper
Low Input/Output Leakage
leadframe. Solderable per MIL-STD-202, Method 208
Small Surface Mount Package
Marking Information: See Page 4
Lead Free By Design/RoHS Compliant (Note 2)
Ordering Information: See Page 4
ESD Protected up to 2kV
Weight: 0.015 grams (approximate)
Gree Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
SOT-26 D G S
2 1 1
ESD protected up 2kV
S G D
2 2 1
TOP VIEW BOTTOM VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain Source Voltage 50 V
V
DSS
Gate-Source Voltage V
V 20
GSS
Drain Current (Note 1) Continuous 305
I mA
D
Pulsed (Note 3) 800
Thermal Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1) P 400 mW
D
Thermal Resistance, Junction to Ambient 313 C/W
R
JA
Operating and Storage Temperature Range T , T -65 to +150 C
j STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 10A
DSS GS D
Zero Gate Voltage Drain Current @ T = 25C I 60 nA V = 50V, V = 0V
C DSS DS GS
V = 12V, V = 0V
1 A GS DS
Gate-Body Leakage 500
I nA V = 10V, V = 0V
GSS GS DS
50 nA
V = 5V, V = 0V
GS DS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V 0.49 1.0 V V = V , I = 250A
GS(th) DS GS D
V = 1.8V, I = 50mA
3.0 GS D
Static Drain-Source On-Resistance 2.5
R V = 2.5V, I = 50mA
DS (ON) GS D
2.0
V = 5.0V, I = 50mA
GS D
On-State Drain Current I 0.5 1.4 A V = 10V, V = 7.5V
D(ON) GS DS
Forward Transconductance |Y | 200 mS V =10V, I = 0.2A
fs DS D
Source-Drain Diode Forward Voltage V 0.5 1.4 V V = 0V, I = 115mA
SD GS S
DYNAMIC CHARACTERISTICS
Input Capacitance C 50 pF
iss
V = 25V, V = 0V
DS GS
Output Capacitance C 25 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 5.0 pF
C
rss
Notes: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10S, Duty Cycle 1%.
4. Diodes Inc.s Green policy can be found on our website at
DMN5L06DMK
V , GATE-SOURCE VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
GS
DS
Fig. 2 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
10
1
0
0
75
-50 -25 0 25 50 100 125 150
T , CHANNEL TEMPERATURE (C) I, DRAIN CURRENT (A)
ch D
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
1
V GATE SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
GS,
D
Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
2 of 4 September 2007
DMN5L06DMK
Diodes Incorporated
www.diodes.com
Document number: DS30927 Rev. 4 - 2
NEW PRODUCT