DMN5L06KQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D MAX BV R DSS DS(ON) MAX T = +25C Very Low Gate Threshold Voltage (1.0V Max) A Low Input Capacitance 2.0 V = 5.0V 300mA GS 50V Fast Switching Speed 2.5 V = 2.5V 200mA GS Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT23 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switches Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Level Switches Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) SOT23 D D G ESD PROTECTED TO 2kV G S Gate Protection Top View Top View S Diode Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN5L06KQ-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN5L06KQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 50 V V DSS Gate-Source Voltage 20 V V GSS Drain Current (Note 6) Continuous 300 I mA D Pulsed (Note 7) 800 Maximum Body Diode Forward Current (Note 6) I 300 mA S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 350 mW D Thermal Resistance, Junction to Ambient R 357 C/W JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 50 V BV V = 0V, I = 10A DSS GS D 60 nA Zero Gate Voltage Drain Current T = +25C I V = 50V, V = 0V C DSS DS GS V = 12V, V = 0V 1 A GS DS Gate-Body Leakage I 500 nA V = 10V, V = 0V GSS GS DS 50 nA V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.49 1.0 V V V = V , I = 250A GS(TH) DS GS D 2.0 3.0 V = 1.8V, I = 50mA GS D Static Drain-Source On-Resistance R 1.6 2.5 V = 2.5V, I = 50mA DS(ON) GS D 1.3 2.0 V = 5.0V, I = 50mA GS D On-State Drain Current 0.5 1.4 A ID(ON) VGS = 10V, VDS = 7.5V Forward Transconductance 200 mS Y V = 10V, I = 0.2A fs DS D Source-Drain Diode Forward Voltage 0.5 0.8 1.4 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 50 pF C iss V = 25V, V = 0V DS GS Output Capacitance 25 pF C oss f = 1.0MHz Reverse Transfer Capacitance 5.0 pF C rss Notes: 6. Device mounted on FR-4 PCB. 7. Pulse width 10ms, Duty Cycle 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 June 2019 DMN5L06KQ www.diodes.com Diodes Incorporated Document number: DS41931 Rev. 1 - 2