DMN5L06VKQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max ID Max BVDSS R Max DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed Low Input/Output Leakage 2 V = 5V 280mA GS Ultra-Small Surface Mount Package ESD Protected up to 2kV 2.5 VGS = 2.5V 258mA 50V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 3 VGS = 1.8V 235mA The DMN5L06VKQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. DMN5L06VKQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage V 50 V DSS Drain-Gate Voltage R 1.0m V 50 V GS DGR 20 Gate-Source Voltage Continuous V V GSS Pulsed 40 280 mA ID Drain Current (Note 6) Continuous Pulsed 1.5 A IDM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 250 mW PD Thermal Resistance, Junction to Ambient (Note 6) R 500 C/W JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current T = +25C I 60 nA V = 50V, V = 0V C DSS DS GS 1 A V = 12V, V = 0V GS DS Gate-Body Leakage 500 nA IGSS VGS = 10V, VDS = 0V 50 nA VGS = 5V, VDS = 0V ON CHARACTERISTICS (Note 7) 0.49 1.0 Gate Threshold Voltage TJ = +25C V V V = V , I = 250A GS(TH) DS GS D T = 0C to +85C (Note 8) 0.30 1.2 J 2.49 3.0 V = 1.8V, I = 50mA GS D 1.53 Static Drain-Source On-Resistance 2.5 V = 2.5V, I = 50mA RDS(ON) GS D 1.16 2.0 VGS = 5.0V, ID = 50mA On-State Drain Current I 0.5 1.4 A V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance Y 200 ms V = 10V, I = 0.2A fs DS D 0.73 Source-Drain Diode Forward Voltage V 0.5 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 50 pF Ciss V = 25V, V = 0V DS GS Output Capacitance 25 pF Coss f = 1.0MHz Reverse Transfer Capacitance 5.0 pF Crss Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN5L06VKQ December 2019 Diodes Incorporated www.diodes.com Document number: DS37438 Rev. 2 - 2