DMN5L06WK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage (1.0V max) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 ESD Protected Up To 2kV Terminal Connections: See Diagram Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Weight: 0.006 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability SOT-323 D GS ESD protected up to 2kV TOP VIEW TOP VIEW Ordering Information (Note 4) Part Number Case Packaging DMN5L06WK-7 SOT-323 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN5L06WK Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage 50 V V DSS Gate-Source Voltage V V 20 GSS Drain Current (Note 5) Continuous 300 I mA D Pulsed (Note 6) 800 Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient 500 R C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 50 V BV V = 0V, I = 10 A DSS GS D 60 nA Zero Gate Voltage Drain Current T = +25C I V = 50V, V = 0V C DSS DS GS V = 12V, V = 0V 1 A GS DS Gate-Body Leakage I 500 nA V = 10V, V = 0V GSS GS DS 50 nA V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.49 1.0 V V V = V , I = 250 A GS(th) DS GS D 3.0 V = 1.8V, I = 50mA GS D Static Drain-Source On-Resistance R 2.5 V = 2.5V, I = 50mA DS (ON) GS D 2.0 V = 5.0V, I = 50mA GS D On-State Drain Current I 0.5 1.4 A V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance 200 mS Y V =10V, I = 0.2A fs DS D Source-Drain Diode Forward Voltage 0.5 1.4 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 50 pF C iss V = 25V, V = 0V DS GS Output Capacitance 25 pF C oss f = 1.0MHz Reverse Transfer Capacitance 5.0 pF C rss Turn-On Delay Time t 2.1 ns D(on) Turn-On Rise Time t 1.8 ns r = 30V, V = 10V, V DD GS Turn-Off Delay Time t 14.4 ns R = 25 , I = 200mA D(off) G D Turn-Off Fall Time t 8.4 ns f Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 March 2014 DMN5L06WK Diodes Incorporated www.diodes.com Document number: DS30928 Rev. 8 - 2