DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D V R Max (BR)DSS DS(ON) T = 25C A Low Gate Threshold Voltage Low Input Capacitance 2.4 V = 10V 510mA GS Fast Switching Speed 60V 4.0 V = 4V 390mA GS Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SOT26 resistance (R ), yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding making it ideal for high-efficiency power management applications. Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Analog Switch Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) D2 D1 D G S 1 2 2 G2 G1 ESD PROTECTED TO 2kV Gate Protection S G D 1 1 2 Gate Protection S2 Diode S1 Diode SOT26 Top View Equivalent Circuit Top View Per Element Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN601DMK-7 SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN601DMK Marking Information K7K = Marking Code K7K YM YM = Date Code Marking Y or Y = Year (ex: S = 2005) M = Month (ex: 9 = September) Date Code Key Year 2005 --- 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 Code S --- B C D E F G H I J K L Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 510 A I mA D State 400 T = +70C A Continuous Drain Current (Note 6) (V = 10V) GS T = +25C 580 A t<10s mA I D 470 T = +70C A Steady T = +25C 390 A I mA D State 300 T = +70C A Continuous Drain Current (Note 6) (V = 4V GS T = +25C 440 A t<10s I mA D 340 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 850 mA I DM Maximum Body Diode Continuous Current 1.2 A I S Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.7 W P D Steady State 157 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 121 Total Power Dissipation (Note 6) 0.98 W P D Steady State 113 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 88 C/W Thermal Resistance, Junction to Case (Note 6) 26 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 2 of 7 DMN601DMK October 2015 Diodes Incorporated www.diodes.com Document number: DS30657 Rev. 6 - 2 NEW PRODUCT K7K YM