DMN601DWKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFET I Max D BV R Max DSS DS(ON) Low On-Resistance T = +25C A Low Gate Threshold Voltage 60V 3 V = 5V 0.3A GS Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Description and Applications ESD Protected This MOSFET is designed to meet the stringent requirements of Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Automotive applications. It is qualified to AEC-Q101, supported by a Halogen and Antimony Free. Green Device (Note 3) PPAP and is ideal for use in: Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Motor Control Power Management Functions Mechanical Data Case: SOT363 Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D2 D1 D G S 2 1 1 SOT363 G2 G1 S G D Gate Protection Gate Protection 2 2 1 S1 S2 Diode Diode ESD Protected up to 2kV ESD Protected up to 2kV Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN601DWKQ-7 SOT363 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN601DWKQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Continuous 305 Drain Current (Note 6) mA I D 800 Pulsed (Note 7) Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient 625 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 1.6 2.5 V V = 10V, I = 1mA GS(TH) DS D 2.0 V = 10V, I = 0.5A GS D Static Drain-Source On-Resistance R DS(ON) 3.0 V = 5V, I = 0.05A GS D Forward Transfer Admittance Y 80 ms V =10V, I = 0.2A fs DS D Diode Forward Voltage (Note 9) V 0.5 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 30 50 pF iss V = 25V, V = 0V DS GS Output Capacitance C 4.2 25 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.9 5.0 pF rss Gate Resistance R 133 f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge Q 304 pC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 203 pC gs I = 250mA D Gate-Drain Charge 84 pC Q gd Turn-On Delay Time t 3.9 ns D(ON) Turn-On Rise Time 3.4 ns V = 30V, V = 10V, t DD GS R Turn-Off Delay Time t 15.7 ns RG = 25, ID = 200mA D(OFF) Turn-Off Fall Time t 9.9 ns F Notes: 6. Device mounted on FR-4 PCB. 7. Pulse width 10S, duty cycle 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN601DWKQ December 2017 Diodes Incorporated www.diodes.com Document number: DS39982 Rev. 2 - 2 NEW PRODUCT