DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: R Case: SOT323 DS(ON) Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leakage Terminals: Finish Matte Tin annealed over Alloy 42 e3 ESD Protected Gate leadframe. Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminal Connections: See Diagram Halogen and Antimony Free. Green Device (Note 3) Weight: 0.006 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability SOT323 Drain D Gate GS Gate Protection Source Diode TOP VIEW ESD PROTECTED TOP VIEW Pin Out Configuration EQUIVALENT CIRCUIT Ordering Information (Note 4) Part Number Case Packaging DMN601WK-7 SOT323 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN601WK Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Continuous 300 Drain Current (Note 5) I mA D Pulsed (Note 6) 800 Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient 625 C/W R JA Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V I = 10A DSS GS , D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V 20V, V = 0V GSS GS = DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 1.6 2.5 V V = 10V, I = 1mA GS(th) DS D V 10V, I = 0.5A GS = D 2.0 Static Drain-Source On-Resistance R DS(ON) 3.0 V = 4.5V, I = 0.2A GS D Forward Transfer Admittance 80 ms Y V = 10V, I = 0.2A fs DS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 50 pF iss Output Capacitance C 25 pF V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 5.0 pF C rss Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 5 September 2013 DMN601WK Diodes Incorporated www.diodes.com Document number: DS30653 Rev. 5 - 2