DMN6022SSD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance BV R DSS DS(ON) MAX T = +25C A Low Input Capacitance 6.0 A 29m V = 10V GS 60V Fast Switching Speed 34m V = 6.0V 5.5 A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, Mechanical Data DS(ON) making it ideal for high-efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D 2 D 1 SO-8 SO-8 S1 D1 Pin1 G1 D1 G2 G1 S2 D2 G2 D2 S2 S1 Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN6022SSD-13 SO-8 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN6022SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 14 C I A D 11 T = +70C C Continuous Drain Current (Note 6) V = 10V GS T = +25C 6.0 A A I D 5.0 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 45 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 2.0 A S Avalanche Current (Note 7) I 22 A AS Avalanche Energy (Note 7) E 24 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.2 W T = +25C P A D Steady State 102 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 61 Total Power Dissipation (Note 6) 1.5 W T = +25C P A D Steady State 80 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 6) R 15 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.0 3.0 V V V = V , I = 250A GS(TH) DS GS D 20 29 V = 10V, I = 5A GS D Static Drain-Source On-Resistance R m DS(ON) 22 34 V = 6V, I = 5A GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 2110 pF iss V = 30V, V = 0V, DS GS Output Capacitance C 78 pF oss f = 1.0MHz Reverse Transfer Capacitance C 51 pF rss Gate Resistance R 2.0 V = 0V, V = 0V, f = 1MHz g DS GS 14 nC Total Gate Charge at (V = 4.5V) Q GS g 32 nC Total Gate Charge at (V = 10V) Q GS g V = 30V, I = 6A DS D Gate-Source Charge 7.0 nC Q gs Gate-Drain Charge 4.0 nC Q gd Turn-On Delay Time 5.4 ns t D(ON) Turn-On Rise Time t 4.4 ns V = 10V, V = 30V, R GS DS Turn-Off Delay Time t 30.4 ns R = 6, I = 1A D(OFF) g D Turn-Off Fall Time t 8.4 ns F Body Diode Reverse Recovery Time t 18.1 ns I = 1.7A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge Q 12.5 nC I = 1.7A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6022SSD April 2018 Diodes Incorporated www.diodes.com Document number: DS37642 Rev. 5 - 2 ADVANCE INFORMATION