DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I D max V R Package (BR)DSS DS(ON) max 0.6mm profile ideal for low profile applications T = +25C A 2 PCB footprint of 4mm 6.5A 38m V = 10V GS U-DFN2020-6 Low On-Resistance 60V Type E Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 47m V = 4.5V 5.2A GS Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(on) Case: U-DFN2020-6 Type E performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish NiPdAu over Copper leadframe. Solderable e4 per MIL-STD-202, Method 208 General Purpose Interfacing Switch Weight: 0.0065 grams (approximate) Power Management Functions Drain U-DFN2020-6 Type E Pin1 Gate Source Bottom View Pin Out Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMN6040SFDE-7 N8 7 3,000 DMN6040SFDE-13 N8 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6040SFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 5.3 A I A D State 4.1 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C A 6.5 t<10s A I D 5.1 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 30 A I DM Maximum Body Diode Continuous Current I 2.5 A S Avalanche Current (Note 7) L = 0.1mH I 14.2 A AR Avalanche Energy (Note 7) L = 0.1mH E 10 mJ AR Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.66 A Total Power Dissipation (Note 5) P W D T = +70C 0.42 A Steady state 189 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 132 T = +25C 2.03 A Total Power Dissipation (Note 6) W P D T = +70C 1.31 A Steady state 61 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 6) 9.3 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 100 nA I V = 60V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(th) DS GS D 30 38 V = 10V, I = 4.3A GS D Static Drain-Source On-Resistance m R DS (ON) 35 47 V = 4.5V, I = 4A GS D Forward Transfer Admittance Y 4.5 S V = 10V, I = 4.3A fs DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1287 iss V = 25V, V = 0V DS GS Output Capacitance C 57 pF oss f = 1.0MHz Reverse Transfer Capacitance C 44 rss Gate Resistance 1.2 R V = 0V, V = 0V, f = 1.0MHz G DS GS 22.4 Total Gate Charge (V = 10V) Q GS g 10.4 Total Gate Charge (V = 4.5V) Q GS g nC V = 30V, I = 4.3A DS D Gate-Source Charge Q 4.9 gs Gate-Drain Charge Q 3.0 gd Turn-On Delay Time t 6.6 D(on) Turn-On Rise Time t 8.1 r V = 10V, V = 30V, R = 6, GS DD G nS Turn-Off Delay Time t 20.1 I = 4.3A D(off) D Turn-Off Fall Time t 4.0 f Body Diode Reverse Recovery Time t 18 nS I = 4.3A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge 11.9 nC Q I = 4.3A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 August 2012 DMN6040SFDE Diodes Incorporated www.diodes.com Datasheet number: DS35792 Rev. 8 - 2 ADVANCE INFORMATION