DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Input Capacitance D V R (BR)DSS DS(on) max T = +25C C Low On-Resistance 40m V = 10V 20A GS Fast Switching Speed 60V 50m V = 4.5V 16A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Case: TO252 (DPAK) applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Finish annealed over Copper Power Management Functions leadframe. Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.33 grams (approximate) D TO252 D GS Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN6040SK3-13 TO252 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6040SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 20 C Continuous Drain Current (Note 5) V = -10V I A GS D State = +100C 13 T C Maximum Body Diode Forward Current (Note 5) 4 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 30 A I DM Avalanche Current (Note 6) 14.2 A I AR Avalanche Energy (Note 6) 10 mJ E AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 42 C Total Power Dissipation (Note 5) W P D T = +100C 17 C Thermal Resistance, Junction to Ambient (Note 5) R 44 JA C/W Thermal Resistance, Junction to Case (Note 5) R 3 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(th) DS GS D 30 40 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 35 50 V = 4.5V, I = 12A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1287 iss V = 25V, V = 0V DS GS Output Capacitance C 57 pF oss f = 1.0MHz Reverse Transfer Capacitance C 44 rss Gate Resistance R 1.2 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 22.4 GS g Total Gate Charge (V = 4.5V) Q 10.4 GS g nC V = 30V, I = 4.3A DS D Gate-Source Charge 4.9 Q gs Gate-Drain Charge 3.0 Q gd Turn-On Delay Time 6.6 t D(on) Turn-On Rise Time 8.1 t V = 10V, V = 30V, R = 6, r GS DD G nS Turn-Off Delay Time I = 4.3A t 20.1 D(off) D Turn-Off Fall Time t 4.0 f Body Diode Reverse Recovery Time t 18 nS I = 4.3A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge Q 11.9 nC I = 4.3A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. UIS in production with L = 0.1mH, T = +25C. J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 June 2014 DMN6040SK3 Diodes Incorporated www.diodes.com Document number: DS35733 Rev. 5 - 2