DMN6040SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D V R Max (BR)DSS DS(ON) Low On-Resistance T = +25C A Fast Switching Speed 40m V = 10V 5.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V Halogen and Antimony Free. Green Device (Note 3) 4.4A 55m V = 4.5V GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SO-8 resistance (R ), yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Tin Finish Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 S1 D1 D1 D2 D1 G1 S2 D2 G1 G2 G2 D2 S1 S2 Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMN6040SSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6040SSDQ Maximum Ratings ( T = +25C unless otherwise specified) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 5.0 A I A D State 4.1 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 6.6 A t<10s A I D 5.3 T = +70C A Maximum Body Diode Forward Current (Note 7) I 2.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 30 A DM Pulsed Body Diode Forward Current (10s pulse, duty cycle = 1%) I 30 A SM Avalanche Current (Note 8) L = 0.1mH I 14.2 A AS Avalanche Energy (Note 8) L = 0.1mH 10 mJ E AS Thermal Characteristics ( T = +25C unless otherwise specified) A Characteristic Symbol Value Units 1.3 T = +25C A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A Steady State 102 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 61 1.7 T = +25C A Total Power Dissipation (Note 7) W P D T = +70C 1.1 A Steady State 75 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 7) R 14.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = 25C unless otherwise specified) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 100 nA IDSS VDS = 60V, VGS = 0V Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 30 40 V = 10V, I = 4.5A GS D Static Drain-Source On-Resistance R m DS(ON) 35 55 V = 4.5V, I = 3.5A GS D Forward Transfer Admittance 4.5 S Y V = 10V, I = 4.3A FS DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1,287 ISS V = 25V, V = 0V DS GS Output Capacitance C 57 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 44 RSS Gate Resistance R 1.2 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 22.4 GS G 10.4 Total Gate Charge (V = 4.5V) Q GS G nC V = 30V, I = 4.3A DS D Gate-Source Charge 4.9 Q GS Gate-Drain Charge 3.0 Q GD Turn-On Delay Time 6.6 t D(ON) Turn-On Rise Time t 8.1 V = 10V, V = 30V, R = 6, R GS DD G ns Turn-Off Delay Time t 20.1 I = 4.3A D(OFF) D Turn-Off Fall Time t 4.0 F Body Diode Reverse Recovery Time t 18 ns I = 4.3A, di/dt = 100A/s RR S Body Diode Reverse Recovery Charge Q 11.9 nC I = 4.3A, di/dt = 100A/s RR S Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6040SSDQ November 2016 Diodes Incorporated www.diodes.com Document number: DS38509 Rev. 2 - 2 ADVANCE INFORMATION