X-On Electronics has gained recognition as a prominent supplier of DMN6040SSS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN6040SSS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN6040SSS-13 Diodes Incorporated

DMN6040SSS-13 electronic component of Diodes Incorporated
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Part No.DMN6040SSS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
Datasheet: DMN6040SSS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.265 ea
Line Total: USD 1.33 
Availability - 67
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
24
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 1
25 : USD 0.1539

67
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.265
50 : USD 0.2118
150 : USD 0.1853
500 : USD 0.1654
2500 : USD 0.1494
5000 : USD 0.1415

4781
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.396
10 : USD 0.2882
100 : USD 0.2288
500 : USD 0.2013
1000 : USD 0.187
2500 : USD 0.1441

4119
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.4046
75 : USD 0.224
207 : USD 0.2114
1000 : USD 0.2072

167325
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.1707

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the DMN6040SSS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN6040SSS-13 and other electronic components in the MOSFETs category and beyond.

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DMN6040SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 40m V = 10V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) 60V Qualified to AEC-Q101 standards for High Reliability 55m V = 4.5V 4.7A GS Mechanical Data Description and Applications Case: SO-8 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(on) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Backlighting Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.008 grams (approximate) SO-8 S D S D S D G D Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN6040SSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6040SSS Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = 25C Steady A 5.5 A I D State 4.4 T = 70C A Continuous Drain Current (Note 6) V = 10V GS T = 25C 7.0 A t<10s I A D 5.5 T = 70C A Maximum Continuous Body Diode Forward Current (Note 6) I 2.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 30 A DM Avalanche Current (Note 7) L = 0.1mH I 14.2 A AR Repetitive Avalanche Energy (Note 7) L = 0.1mH 10 mJ E AR Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units 1.5 T = 25C A Total Power Dissipation (Note 5) P W D T = 70C 1 A Steady State 80 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 48 T = 25C 2.0 A Total Power Dissipation (Note 6) W P D T = 70C 1.3 A Steady State 61 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case 6.4 R JC Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 100 nA V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(th) DS GS D 30 40 V = 10V, I = 4.5A GS D Static Drain-Source On-Resistance R m DS (ON) 35 55 V = 4.5V, I = 3.5A GS D Forward Transfer Admittance 4.5 S Y V = 10V, I = 4.3A fs DS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1287 C iss V = 25V, V = 0V DS GS Output Capacitance C 57 pF oss f = 1.0MHz Reverse Transfer Capacitance C 44 rss Gate Resistance R 1.2 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 22.4 GS g Total Gate Charge (V = 4.5V) Q 10.4 GS g nC V = 30V, I = 4.3A DS D Gate-Source Charge Q 4.9 gs Gate-Drain Charge Q 3.0 gd Turn-On Delay Time 6.6 t D(on) Turn-On Rise Time 8.1 t V = 10V, V = 30V, R = 6, r GS DD G nS Turn-Off Delay Time 20.1 I = 4.3A t D D(off) Turn-Off Fall Time t 4.0 f Body Diode Reverse Recovery Time t 18 nS I = 4.3A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge Q 11.9 nC I = 4.3A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = 25C AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 May 2012 DMN6040SSS Diodes Incorporated www.diodes.com Document number: DS35709 Rev. 3 - 2 NEW PRODUCT ADVANCE INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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