X-On Electronics has gained recognition as a prominent supplier of DMN6040SVT-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN6040SVT-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN6040SVT-7 Diodes Incorporated

Name: DMN6040SVT-7
Brand: Diodes Incorporated
SKU: DMN6040SVT7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

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DMN6040SVT-7 electronic component of Diodes Incorporated

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Part No.	DMN6040SVT-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	Diodes Incorporated MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A
Datasheet:	DMN6040SVT-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

736: USD 0.1765 ea
Line Total: USD 129.9

Availability - 941
Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ: 736 Multiples: 1
Pack Size: 1

DMN6040SVT-7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

941

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 736
Multiples : 1

736 : USD 0.1765

198

Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ : 5
Multiples : 5

5 : USD 0.5042
50 : USD 0.3465
150 : USD 0.2789
500 : USD 0.2376
3000 : USD 0.2192
6000 : USD 0.2083

13034

Ship by Tue. 04 Mar to Thu. 06 Mar

MOQ : 1
Multiples : 1

1 : USD 0.8025
10 : USD 0.4975
100 : USD 0.3059
500 : USD 0.1958
1000 : USD 0.1903
3000 : USD 0.187
24000 : USD 0.1804

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

5 A 5 A

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

44 mOhms 44 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs - Gate-Source Breakdown Voltage

20 V 20 V

Vgs th - Gate-Source Threshold Voltage

3 V 3 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.2 W 1.2 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TSOT - 23 - 6 TSOT - 23 - 6

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

22.4 nC 22.4 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Series

Dmn60 Dmn60

Brand

Diodes Incorporated Diodes Incorporated

Forward Transconductance - Min

4.5 S 4.5 S

Fall Time

4 ns 4 ns

Rise Time

8.1 ns 8.1 ns

Typical Turn-Off Delay Time

20.1 ns 20.1 ns

Typical Turn-On Delay Time

6.6 ns 6.6 ns

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

DMN6040SVT-7 Alternative Parts

We are delighted to provide the DMN6040SVT-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN6040SVT-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMN6040SVT-7 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is manufactured by Diodes Incorporated. It is a N-Channel type with a breakdown voltage (VGS) of 60V, a maximum drain-source voltage (VDSS) of 50V, a built-in source-drain diode, an extremely low on-resistance (RDS(on)) of 44mO, a maximum gate threshold voltage (VGS) of 10V, a maximum drain current (ID) of 5A, and a thermal resistance (R?JA) of 120°C/W. This MOSFET is ideal for switching applications in wide bandgap-based integrated circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
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Availability	Price	Buy Price	Quantity
941 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 736 Multiples : 1	736 : USD 0.1765

198 Ship by Thu. 13 Mar to Tue. 18 Mar MOQ : 5 Multiples : 5	5 : USD 0.5042 50 : USD 0.3465 150 : USD 0.2789 500 : USD 0.2376 3000 : USD 0.2192 6000 : USD 0.2083

13034 Ship by Tue. 04 Mar to Thu. 06 Mar MOQ : 1 Multiples : 1	1 : USD 0.8025 10 : USD 0.4975 100 : USD 0.3059 500 : USD 0.1958 1000 : USD 0.1903 3000 : USD 0.187 24000 : USD 0.1804

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