DMN6040SVTQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production I D V R Max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Low On-Resistance 44m V = 10V 5.0A GS Fast Switching Speed 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.3A 60m V = 4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: TSOT26 resistance (R ), yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Tin Finish Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) TSOT26 D 1 6 D D 2 5 D G 3 4 S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMN6040SVTQ-7 TSOT26 3,000/Tape & Reel DMN6040SVTQ-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6040SVTQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V VDSS Gate-Source Voltage 20 V V GSS Steady T = +25C 5.0 A A I D State 4.0 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 6.3 A t<10s I A D 5.0 T = +70C A Steady T = +25C 4.3 A A I D State 3.4 T = +70C A Continuous Drain Current (Note 7) V = 5V GS T = +25C 5.4 A t<10s I A D 4.3 T = +70C A Maximum Body Diode Forward Current (Note 7) I 2.1 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 30 A I DM Avalanche Current (Note 8) L = 0.1mH 14.2 A I AR Avalanche Energy (Note 8) L = 0.1mH 10 mJ E AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 6) P W D 0.75 T = +70C A Steady State 106 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 69 C/W 1.8 T = +25C A Total Power Dissipation (Note 7) P W D 1.1 T = +70C A Steady State 68 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 44 C/W Thermal Resistance, Junction to Case (Note 7) 20 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AR AR J 2 of 8 DMN6040SVTQ December 2015 Diodes Incorporated www.diodes.com Document number: DS38508 Rev. 1 - 2 ADVANCE INFORMATION