DMN6068LK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance Fast switching speed I D Lead-Free Finish RoHS Compliant (Notes 1 & 2) V(BR)DSS RDS(on) T = +25C A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 8.5A 68m VGS = 10V 60V 7.0A 100m V = 4.5V GS Mechanical Data Case: TO252 Case Material: Molded Plastic, Green Molding Compound. UL Description Flammability Classification Rating 94V-0 (Note 1) This MOSFET has been designed to minimize the on-state resistance Moisture Sensitivity: Level 1 per J-STD-020 (R ) and yet maintain superior switching performance, making it DS(on) Terminals Connections: See Diagram ideal for high efficiency power management applications. Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) Applications Motor Control Transformer Driving Switch D D TO252-3L DC-DC Converters Power Management Functions Uninterrupted Power Supply G D S G S TOP VIEW PIN OUT -TOP VIEW Equivalent Circuit Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN6068LK3-13 N6068L 13 16 2,500 Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN6068LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source voltage V 60 V DSS Gate-Source voltage (Note 5) V 20 V GS Single Pulsed Avalanche Energy (Note 11) E 37.5 mJ AS Single Pulsed Avalanche Current (Note 11) I 5.0 A AS (Note 7) 8.5 Continuous Drain current 6.8 A V = 10V T = 70C (Note 7) I GS A D (Note 6) 6.0 Pulsed Drain current V = 10V (Note 8) I 22.2 A GS DM Continuous Source current (Body diode) (Note 7) I 10.2 A S Pulsed Source current (Body diode) (Note 8) I 22.2 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 4.12 (Note 6) 33 Power dissipation 8.49 W (Note 7) P D Linear derating factor 67.9 mW/C 2.12 (Note 9) 16.9 (Note 6) 30.3 Thermal Resistance, Junction to Ambient (Note 7) 14.7 R JA C/W (Note 9) 59.0 Thermal Resistance, Junction to Lead (Note 10) 3.09 R JL Operating and storage temperature range T , T -55 to +150 C J STG Notes: 5. AEC-Q101 V maximum is 16V. GS 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as note 2, except the device is measured at t 10 sec. 8. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 11. UIS in production with L = 3.0mH, I = 5.0A, R = 25 , V = 50V, starting T = 25C AS G DD J 2 of 8 May 2013 DMN6068LK3 Diodes Incorporated www.diodes.com Document Number DS32057 Rev 4 - 2