A Product Line of Diodes Incorporated DMN6068SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I D V R (BR)DSS DS(on) T = +25 C Low on-resistance A Fast switching speed 68m V = 10V 5.6A GS 60V Lead-Free Finish RoHS compliant (Notes 1 & 2) 100m V = 4.5V 4.7A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data and yet maintain superior switching performance, making it ideal for Case: SOT223 high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Motor Control Terminals: Finish - Matte Tin annealed over Copper lead frame. Transformer Driving Switch Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.112 grams (approximate) Power Management Functions Uninterrupted Power Supply D SOT223 G S Pin Out - Top View Top View Equivalent Circuit Ordering Information (Note 4 & 5) Part Number Qualification Case Packaging DMN6068SE-13 Standard SOT223 4000 / Tape & Reel DMN6068SEQ-13 Automotive SOT223 4000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated DMN6068SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source voltage V 60 V DSS Gate-Source voltage (Note 6) V 20 V GS Single Pulsed Avalanche Energy (Note 11) E 37.5 mJ AS Single Pulsed Avalanche Current (Note 11) I 5.0 A AS (Note 8) 5.6 Continuous Drain current 4.5 A V = 10V T = +70C (Note 8) I GS A D (Note 7) 4.1 Pulsed Drain current (Note 9) 20.8 A V = 10V I GS DM Continuous Source current (Body diode) (Note 8) 4.9 A I S Pulsed Source current (Body diode) (Note 9) 20.8 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.0 (Note 7) 16.0 Power dissipation W P D Linear derating factor mW/C 3.7 (Note 8) 29.5 (Note 7) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 8) 34 C/W Thermal Resistance, Junction to Lead (Note 10) 11.5 R JL Operating and storage temperature range T , T -55 to +150 C J STG Notes: 6. AEC-Q101 V maximum is 16V. GS 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 8. Same as note (3), except the device is measured at t 10 sec. 9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 11. UIS in production with L = 3.0mH, I = 5.0A, R = 25, V =50V, starting T = +25C. AS G DD J 2 of 9 September 2013 DMN6068SE Diodes Incorporated www.diodes.com Document Number DS32033 Rev. 4 - 2 ADVANCE INFORMATION