DMN6069SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production I Fast switching speed D V R max (BR)DSS DS(ON) T = +25C A Low on-resistance 69m V = 10V GS 4.3A Lead-Free Finish RoHS compliant (Notes 1 & 2) 60V 100m V = 4.5V 3.5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Case: SOT223 applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Motor control Transformer driving switch Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 DC-DC Converters Power management functions Weight: 0.112 grams (approximate) Uninterrupted power supply D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Qualification Case Packaging DMN6069SE-13 Standard SOT223 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN6069SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 4.3 A I A D 3.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C C 10 A I D 8 T = +70C C Pulsed Drain Current (10s pulse, duty cycle = 1%) 25 A I DM Maximum Body Diode Continuous Current I 3.2 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units TA = +25C 2.2 Total Power Dissipation (Note 5) W P D TA = +70C 1.4 Thermal Resistance, Junction to Ambient (Note 5) R 58 C/W JA Total Power Dissipation (Note 5) P 11 W D Thermal Resistance, Junction to Case (Note 5) R 8.9 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250 A GS(th) DS GS D 47 69 V = 10V, I = 3A GS D Static Drain-Source On-Resistance m R DS (ON) 54 100 V = 4.5V, I = 2.4A GS D Diode Forward Voltage V 0.8 1.1 V V = 0V, I = 2.5A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 825 iss V = 30V, V = 0V DS GS Output Capacitance 40 pF C oss f = 1MHz Reverse Transfer Capacitance 29 C rss Gate Resistance 2.3 R V = 0V, V = 0V, f = 1.0MHz G DS GS 7.2 Total Gate Charge (V = 4.5V) Q GS g 16 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 12A DS D 3.2 Gate-Source Charge Q gs 2.8 Gate-Drain Charge Q gd 3.8 Turn-On Delay Time t D(on) 6.7 Turn-On Rise Time t r V = 30V, V = 10V, DD GS nS 16 Turn-Off Delay Time t R = 6 , I = 12A D(off) G D Turn-Off Fall Time 5.3 t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 January 2014 DMN6069SE Diodes Incorporated www.diodes.com Datasheet number: DS36474 Rev. 2 - 2 ADVANCE INFORMATION