DMN6069SFG
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
I Max Low R Ensures On-State Losses are Minimized
D DS(ON)
BV R Max
DSS DS(ON)
T = +25C Small Form Factor Thermally Efficient Package Enables Higher
C
Density End Products (PowerDI )
50m @ V = 10V 18A
GS
60V
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
63m @ V = 4.5V 16A
GS
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: PowerDI3333-8
This MOSFET is designed to minimize the on-state resistance
Case Material: Molded Plastic,Gree Molding Compound.
(R ), yet maintain superior switching performance, making it
DS(ON)
UL Flammability Classification Rating 94V-0
ideal for high efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Backlighting
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Power Management Functions
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Weight: 0.03 grams (Approximate)
D
PowerDI3333-8
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View Top View Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN6069SFG-7 2,000/Tape & Reel
PowerDI3333-8
DMN6069SFG-13 3,000/Tape & Reel
PowerDI3333-8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN6069SFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 60 V
VDSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 5.6
A
Steady State A
I
D
4.5
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 18
C
Steady State I A
D
14.5
TC = +70C
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) A
I 25
DM
Maximum Continuous Body Diode Forward Current (Note 6) A
I 2.5
S
Avalanche Current (Note 7) L = 0.1mH 12 A
I
AS
Avalanche Energy (Note 7) L = 0.1mH 7.2 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P 0.93 W
D
Steady State 134
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 82
Total Power Dissipation (Note 6) P 2.4 W
D
Steady State 53
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 33
C/W
Thermal Resistance, Junction to Case R 5
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 250A
DSS GS D
1 A
Zero Gate Voltage Drain Current T = +25C I V = 60V, V = 0V
J DSS DS GS
Zero Gate Voltage Drain Current T = +150C (Note 9) I 100 A V = 60V, V = 0V
J DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1 3 V V = V , I = 250A
GS(TH) DS GS D
39 50 V = 10V, I = 4.5A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
47 63 V = 4.5V, I = 3A
GS D
Diode Forward Voltage V 1.1 V V = 0V, I = 2.5A
SD GS S
On State Drain Current (Note 9) I 20 A V 5V, V = 10V
D(ON) DS GS
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 1,480 pF
C 740
ISS
V = 30V, V = 0V,
DS GS
Output Capacitance 40 80 pF
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance 28 55 pF
C
RSS
Gate Resistance R 2.2 4 V = 0V, V = 0V, f = 1MHz
G DS GS
12 nC
Total Gate Charge (V = 4.5V) Q 6.4
GS G
14 25 nC
Total Gate Charge (V = 10V) Q
GS G
V = 30V, I = 12A
DS D
Gate-Source Charge 2.8 5.5 nC
Q
GS
Gate-Drain Charge 2.3 5 nC
Q
GD
Turn-On Delay Time 3.6 10 ns
t
D(ON)
Turn-On Rise Time 5.0 10 ns
t V = 30V, I = 12A
R DS D
Turn-Off Delay Time 12 24 ns V = 10V, R = 6.0
t GS G
D(OFF)
Turn-Off Fall Time 3.3 10 ns
t
F
Body Diode Reverse Recovery Time t 11 22 ns
RR
I = 4.5A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q 5.1 10 nC
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
DMN6069SFG November 2016
Diodes Incorporated
www.diodes.com
Document number: DS37821 Rev. 4 - 2