DMN6069SFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C Density End Products (PowerDI ) 50m V = 10V 18A GS 60V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 63m V = 4.5V 16A GS Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: PowerDI3333-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ), yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.03 grams (Approximate) D PowerDI3333-8 Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN6069SFG-7 2,000/Tape & Reel PowerDI3333-8 DMN6069SFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6069SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V VDSS Gate-Source Voltage 20 V V GSS T = +25C 5.6 A Steady State A I D 4.5 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 18 C Steady State I A D 14.5 TC = +70C Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) A I 25 DM Maximum Continuous Body Diode Forward Current (Note 6) A I 2.5 S Avalanche Current (Note 7) L = 0.1mH 12 A I AS Avalanche Energy (Note 7) L = 0.1mH 7.2 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.93 W D Steady State 134 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 82 Total Power Dissipation (Note 6) P 2.4 W D Steady State 53 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 33 C/W Thermal Resistance, Junction to Case R 5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 60V, V = 0V J DSS DS GS Zero Gate Voltage Drain Current T = +150C (Note 9) I 100 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 39 50 V = 10V, I = 4.5A GS D Static Drain-Source On-Resistance m R DS(ON) 47 63 V = 4.5V, I = 3A GS D Diode Forward Voltage V 1.1 V V = 0V, I = 2.5A SD GS S On State Drain Current (Note 9) I 20 A V 5V, V = 10V D(ON) DS GS DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1,480 pF C 740 ISS V = 30V, V = 0V, DS GS Output Capacitance 40 80 pF C OSS f = 1.0MHz Reverse Transfer Capacitance 28 55 pF C RSS Gate Resistance R 2.2 4 V = 0V, V = 0V, f = 1MHz G DS GS 12 nC Total Gate Charge (V = 4.5V) Q 6.4 GS G 14 25 nC Total Gate Charge (V = 10V) Q GS G V = 30V, I = 12A DS D Gate-Source Charge 2.8 5.5 nC Q GS Gate-Drain Charge 2.3 5 nC Q GD Turn-On Delay Time 3.6 10 ns t D(ON) Turn-On Rise Time 5.0 10 ns t V = 30V, I = 12A R DS D Turn-Off Delay Time 12 24 ns V = 10V, R = 6.0 t GS G D(OFF) Turn-Off Fall Time 3.3 10 ns t F Body Diode Reverse Recovery Time t 11 22 ns RR I = 4.5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 5.1 10 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6069SFG November 2016 Diodes Incorporated www.diodes.com Document number: DS37821 Rev. 4 - 2