DMN6069SFGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 50m V = 10V 18A GS Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 60V Smaller End Product 63m V = 4.5V 16A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (R ), yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN6069SFGQ-7 2,000/Tape & Reel PowerDI3333-8 DMN6069SFGQ-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6069SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 5.6 A I A D State 4.5 T = +70C A Continuous Drain Current (Note 7) V = 10V GS Steady T = +25C 18 C A I D State 14.5 T = +70C C Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 25 A I DM Maximum Continuous Body Diode Forward Current (Note 7) 2.5 A IS Avalanche Current (Note 8) L = 0.1mH 12 A IAS Repetitive Avalanche Energy (Note 8) L = 0.1mH E 7.2 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 0.93 W P D Steady State 134 Thermal Resistance, Junction to Ambient (Note 6) C/W RJA t<10s 82 Total Power Dissipation (Note 7) P 2.4 W D Steady State 53 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 33 C/W Thermal Resistance, Junction to Case 5 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 2 of 8 DMN6069SFGQ December 2016 Diodes Incorporated www.diodes.com Document number: DS39399 Rev.1 - 2 ADVANCED INFORMATION