DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Typical off board profile of 0.5mm - ideally suited for thin D V R max (BR)DSS DS(ON) T = +25C applications A Low R minimizes conduction losses DS(ON) 85 m V = 10V 3.0A GS 2 60V PCB footprint of 2.56mm 120 m V = 4V GS 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 standards for High Reliability This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Case: X1-DFN1616-6 Type E applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Lead Free Plating (NiPdAu Finish over Copper leadframe) Power Management Functions Terminals: Solderable per MIL-STD-202, Method 208 e4 Analog Switch Weight: 0.04 grams (approximate) X1-DFN1616-6 D Type E Pin 1 G S Top View Bottom View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Reel size (inches) Tape Width (mm) Quantity per Reel DMN6070SFCL-7 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6070SFCL Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 3.0 A A Continuous Drain Current (Note 6) V = 10V I GS D State 2.5 T = +70C A Pulsed Drain Current (10 s pulse, Duty cycle = 1%) 10 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 0.6 W Total Power Dissipation P D (Note 6) 1.8 W (Note 5) 200 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 67 Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250 A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250 A GS(th) DS GS D 67 85 V = 10V, I = 1.5A GS D Static Drain-Source On-Resistance R m DS (ON) 74 120 V = 4V, I = 0.5A GS D Forward Transfer Admittance Y 2.6 S V = 5V, I = 1.5A fs DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 606 pF iss V = 20V, V = 0V, DS GS Output Capacitance C 32.6 pF oss f = 1.0MHz Reverse Transfer Capacitance C 24.6 pF rss Gate Resistance 1.5 R V = 0V, V = 0V, f = 1MHz g DS GS 12.3 nC Total Gate Charge (V =10V) Q GS g 5.6 nC Total Gate Charge (V =4.5V) Q GS g V = 30V, I = 3A DS D Gate-Source Charge 1.7 nC Q gs Gate-Drain Charge Q 1.9 nC gd Turn-On Delay Time t 3.5 ns D(on) Turn-On Rise Time t 4.1 ns r V = 10V, V = 30V, GS DS R = 20 , R = 50 Turn-Off Delay Time t 35 ns G L D(off) Turn-Off Fall Time t 11 ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 5 March 2014 DMN6070SFCL Diodes Incorporated www.diodes.com Document number: DS36502 Rev. 3 - 2 ADVANCE INFORMATION