DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low Gate Threshold Voltage BV R DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 85m V = 10V 4.1A GS 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m V = 4.5V 3.6A GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Case: SOT89 making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Finish Annealed over Copper Lead DC-DC Converters Frame. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.052 grams (Approximate) Backlighting D SOT89 G S Equivalent Circuit Pin-Out Top Top View Ordering Information (Note 4) Part Number Case Quantity per Reel DMN6070SY-13 SOT89 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6070SY Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit V 60 V Drain-Source Voltage DSS V 20 V Gate-Source Voltage GSS Steady T = +25C 4.1 A Continuous Drain Current (Note 6) V = 10V I A GS D State 3.3 T = +70C A 15 Pulsed Drain Current (10s Pulse, Duty Cycle 1%) I A DM 2.5 Maximum Body Diode Continuous Current (Note 6) I A S 15 A Pulsed Body Diode Current (10s Pulse, Duty Cycle 1%) I SM Avalanche Current, L=0.1mH (Note 7) 11 A I AS Avalanche Energy, L=0.1mH (Note 7) 6 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 0.9 W A D Steady State 122 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 72 C/W Total Power Dissipation (Note 6) 2.1 W T = +25C P A D Steady State 58 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 6) 12 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV I = 250A, V = 0V DSS D GS Zero Gate Voltage Drain Current 1 A I V = 60V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 3.0 V I = 250A, V = V GS(TH) D DS GS 70 85 V = 10V, I = 2.5A GS D Static Drain-Source On-Resistance m R DS(ON) 76 110 V = 4.5V, I = 1.5A GS D Diode Forward Voltage V 0.75 1.2 V I = 12A, V = 0V SD S GS DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 588 iss V = 30V, V = 0V DS GS Output Capacitance C 26.5 pF oss f= 1MHz Reverse Transfer Capacitance 20 C rss Gate Resistance 1.5 Vgs= 0V, Vds= 0V, f=1MHz, R g 5.6 Total Gate Charge (V = 4.5V) Q GS g 12.3 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 3A DS D Gate-Source Charge Q 1.7 gs Gate-Drain Charge Q 1.9 gd Turn-On Delay Time t 3.5 D(ON) Turn-On Rise Time t 4.1 R V = 30V, V = 10V DD GS ns Turn-Off Delay Time t 35 R 50, R 20 D(OFF) L g Turn-Off Fall Time t 11 F Body Diode Reverse Recovery Time 18 ns t I = 12A, di/dt = 100A/s RR S Body Diode Reverse Recovery Charge 12 nC Q I = 12A, di/dt = 100A/s RR S Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6070SY January 2017 Diodes Incorporated www.diodes.com Document number: DS39440 Rev. 1 - 2