DMN60H080DS N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features I D Low Input Capacitance BV R Package DSS DS(ON) T = +25C A High BV Rating for Power Application DSS 600V SOT23 80mA 100 V = 10V GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation uses advanced planar technology MOSFET, Mechanical Data provide excellent high voltage and fast switching, making it ideal for Case: SOT23 small-signal and level shift applications. Case Material: Molded Plastic Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish - Matte Tin Annealed over Copper Leadframe e3 Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Weight: 0.008 grams (Approximate) D D G G SOT23 a G S t S e ESD PRPOTECTED r o Top View t e c t i Ordering Information (Note 4) o n Part Number Case Packaging D DMN60H080DS-7 SOT23 3000/Tape & Reel i o DMN60H080DS-13 SOT23 10000/Tape & Reel d e Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN60H080DS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 600 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 70 A Continuous Drain Current (Note 5) V = 10V I mA GS D State 56 T = +70C A Steady T = +25C 80 A mA Continuous Drain Current (Note 6) V = 10V I GS D State 70 T = +70C A Steady T = +25C 40 A Continuous Drain Current (Note 5) V = 4.5V I mA GS D State 32 T = +70C A Steady T = +25C 50 A mA Continuous Drain Current (Note 6) V = 4.5V I GS D State 40 T = +70C A Pulsed Drain Current T = +25C (Note 7) I 0.2 A SP DM Thermal Characteristics Characteristic Symbol Value Unit 0.70 W Power Dissipation, T = +25C (Note 5) P A D 174 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA 1.10 W Power Dissipation, T = +25C (Note 6) P A D 99 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 600 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 600V, V = 0V J DSS DS GS Gate-Body Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) 1.5 3.0 V V = V , I = 250A DS GS D Gate Threshold Voltage V GS(TH) 1.5 2.6 V V = V , I = 8A DS GS D 67 100 V = 10V, I = 60mA GS D Static Drain-Source On-Resistance R DS(ON) 95 290 V = 4.5V, I = 60mA GS D Forward Transfer Admittance Y 76 ms V = 10V, I = 60mA fs DS D Diode Forward Voltage V 1.5 V V = 0V, I = 50mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 25 iss Output Capacitance C 5.2 pF V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C rss 1.4 Total Gate Charge 1.7 Q g V = 10V, V = 300V, GS DD Gate-Source Charge 0.3 nC Q gs I = 0.01A D Gate-Drain Charge 0.9 Q gd Turn-On Delay Time 7 ns t D(ON) V = 300V, V = 10V, DD GS Turn-On Rise Time 10 ns t R RGEN = 3.3, 21 Turn-Off Delay Time t ns D(OFF) I = 60mA D 158 Turn-Off Fall Time t ns F 189.1 Reverse Recovery Time t ns RR V =300V, I =0.06A, R F 32 di/dt = 100A/s Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN60H080DS May 2017 Diodes Incorporated www.diodes.com Document number: DS39475 Rev. 3 - 2