DMN6140L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on) max T = +25C Low Input Capacitance A Fast Switching Speed 140m V = 10V 2.3A GS 60V Low Input/Output Leakage 170m V = 4.5V 2.1A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Power Management Functions Terminal Connections: See Diagram Analog Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.0072 grams (Approximate) D SOT23 D G G S S Pin Configuration Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMN6140L-7 SOT23 3,000/Tape & Reel DMN6140L-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6140L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 1.6 A I A D State 1.2 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 2.0 A t<10s A I D 1.6 T = +70C A Steady T = +25C 2.3 A I A D State 1.8 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 2.9 A t<10s A I D 2.3 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 1.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 10 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 0.7 TA = +25C Total Power Dissipation (Note 5) P W D 0.4 T = +70C A Steady State 183 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 115 1.3 T = +25C A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A Steady State 94 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 61 C/W Thermal Resistance, Junction to Case R 39 JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 60V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(th) DS GS D 92 140 V = 10V, I = 1.8A GS D Static Drain-Source On-Resistance m R DS(ON) 115 170 V = 4.5V, I = 1.3A GS D Forward Transfer Admittance Y 2.2 S V = 15V, I = 1.8A fs DS D Diode Forward Voltage V 0.75 1.0 V V = 0V, I = 0.45A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 315 iss V = 40V, V = 0V DS GS Output Capacitance C 18 pF oss f = 1.0MHz Reverse Transfer Capacitance 16 C rss Gate Resistnace 0.65 R V = 0V, V = 0V, f = 1.0MHz g DS GS 8.6 Total Gate Charge (V = 10V) Q GS g 4.1 Total Gate Charge (V = 5V) Q GS g nC VDS = 30V, ID = 1.8A Gate-Source Charge Q 1.0 gs Gate-Drain Charge Q 1.7 gd Turn-On Delay Time t 2.6 D(on) Turn-On Rise Time t 3.6 r V = 30V, V = 10V, DS GS ns Turn-Off Delay Time t 16.3 R = 6.0I = 1.8A D(off) G D Turn-Off Fall Time t 2.7 f Reverse Recovery Time 16.8 ns t rr I = 1.8A, di/dt =100A/s F Reverse Recovery Charge 9.0 nC Q rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN6140L December 2014 Diodes Incorporated www.diodes.com Document number: DS35621 Rev. 4 - 2 NEW PRODUCT