X-On Electronics has gained recognition as a prominent supplier of DMN61D8LQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN61D8LQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN61D8LQ-7 Diodes Incorporated

DMN61D8LQ-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMN61D8LQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW
Datasheet: DMN61D8LQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.539 ea
Line Total: USD 0.54 
Availability - 10598
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 18
Multiples : 1
18 : USD 0.1727

210
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.434
10 : USD 0.3456
30 : USD 0.3066
100 : USD 0.2592
500 : USD 0.2387
1000 : USD 0.2264

10598
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.539
10 : USD 0.3509
100 : USD 0.2717
500 : USD 0.2123
1000 : USD 0.1892
3000 : USD 0.1661
6000 : USD 0.165

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the DMN61D8LQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN61D8LQ-7 and other electronic components in the MOSFETs category and beyond.

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The DMN61D8LQ-7 with MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW is an N-channel Enhancement Mode Field-Effect Transistor manufactured by Diodes Incorporated. It is designed for use in voltage switchings, current source/sink, amplifiers, and RF applications (up to 1MHz). Its maximum on-state drain current is 470mA and the maximum power dissipation is 610mW. Its drain-source voltage is 60V and the gate-source Voltage is 12V. It features low On-resistance and a low threshold voltage for easy switching. It is RoHS compliant and UL certified.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX
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