X-On Electronics has gained recognition as a prominent supplier of DMN61D8LQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN61D8LQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN61D8LQ-7 Diodes Incorporated

Name: DMN61D8LQ-7
Brand: Diodes Incorporated
SKU: DMN61D8LQ7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMN61D8LQ-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMN61D8LQ-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW
Datasheet:	DMN61D8LQ-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5813 ea
Line Total: USD 0.58

Availability - 8468
Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

DMN61D8LQ-7 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

17

Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ : 376
Multiples : 1

376 : USD 0.1731

2900

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 5
Multiples : 5

5 : USD 0.5523
50 : USD 0.3733
150 : USD 0.2974
500 : USD 0.2492
2500 : USD 0.2278
5000 : USD 0.215

8468

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 0.5813
10 : USD 0.3988
100 : USD 0.2818
500 : USD 0.2112
1000 : USD 0.187
3000 : USD 0.165
6000 : USD 0.1562
9000 : USD 0.1507

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

470 mA 470 mA

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

2.4 Ohms 2.4 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.3 V 1.3 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

390 mW 390 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

+/- 12 V +/- 12 V

Qg - Gate Charge

740 pC 740 pC

Channel Mode

Enhancement Enhancement

Qualification

Aec - Q101 Aec - Q101

Configuration

Single Single

Series

Dmn61 Dmn61

Brand

Diodes Incorporated Diodes Incorporated

Forward Transconductance - Min

80 Ms 80 Ms

Fall Time

440 ns 440 ns

Rise Time

301 ns 301 ns

Factory Pack Quantity :

3000 3000

Typical Turn-Off Delay Time

582 ns 582 ns

Typical Turn-On Delay Time

131 ns 131 ns

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541210000 8541210000

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

DMN61D8LQ-7 Alternative Parts

We are delighted to provide the DMN61D8LQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN61D8LQ-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMN61D8LQ-7 with MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW is an N-channel Enhancement Mode Field-Effect Transistor manufactured by Diodes Incorporated. It is designed for use in voltage switchings, current source/sink, amplifiers, and RF applications (up to 1MHz). Its maximum on-state drain current is 470mA and the maximum power dissipation is 610mW. Its drain-source voltage is 60V and the gate-source Voltage is 12V. It features low On-resistance and a low threshold voltage for easy switching. It is RoHS compliant and UL certified.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
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PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
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Availability	Price	Buy Price	Quantity
17 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 376 Multiples : 1	376 : USD 0.1731

2900 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 5 Multiples : 5	5 : USD 0.5523 50 : USD 0.3733 150 : USD 0.2974 500 : USD 0.2492 2500 : USD 0.2278 5000 : USD 0.215

8468 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 0.5813 10 : USD 0.3988 100 : USD 0.2818 500 : USD 0.2112 1000 : USD 0.187 3000 : USD 0.165 6000 : USD 0.1562 9000 : USD 0.1507

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