X-On Electronics has gained recognition as a prominent supplier of DMN61D8LVTQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN61D8LVTQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN61D8LVTQ-7 Diodes Incorporated

DMN61D8LVTQ-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMN61D8LVTQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Diodes Incorporated MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
Datasheet: DMN61D8LVTQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3598 ea
Line Total: USD 1.8 
Availability - 4324
Ship by Tue. 15 Oct to Fri. 18 Oct
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
17
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 1
Multiples : 1
1 : USD 0.6043
10 : USD 0.1826

4324
Ship by Tue. 15 Oct to Fri. 18 Oct
MOQ : 5
Multiples : 5
5 : USD 0.3598
50 : USD 0.2726
150 : USD 0.2352
500 : USD 0.1885
3000 : USD 0.1677
6000 : USD 0.1554

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMN61D8LVTQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN61D8LVTQ-7 and other electronic components in the MOSFETs category and beyond.

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DMN61D8LVTQ INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER Product Summary Features and Benefits Provides a reliable and robust interface between sensitive logic I max D BV R max DSS DS(ON) and DC relay coils T = +25C A Replaces 3 to 4 discrete components enabling PCB footprint to 1.8 V = 5V GS be reduced 60V 630mA Internal active clamp removes the need for external zener diode 2.4 V = 3V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Capable (Note 4) DMN61D8LVTQ provides a single component solution for switching inductive loads such as relays, solenoids, and small DC motors in Mechanical Data automotive applications, without the need of a freewheeling diode. DMN61D8LVTQ accepts logic level inputs, thus allowing it to be Case: TSOT26 driven by logic gates, inverters and microcontrollers. It is ideally suited Case Material: Molded Plastic, Green Molding Compound for door, window and antenna relay coils. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe e3 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) ESD Protected Gate TSOT26 Top View Top View Internal Schematic Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN61D8LVTQ-7 TSOT26 3,000/Tape & Reel DMN61D8LVTQ-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN61D8LVTQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 630 A Continuous Drain Current (Note 7) I mA D State T = +70C 500 A Maximum Continuous Body Diode Forward Current (Note 7) I 0.5 A S Single Pulse Drain-to-Source Avalanche Energy EZ 200 mJ (For Relays Coils/Inductive Loads of 80 or Higher) (T Initial = +85C) J Peak Power Dissipation, Drain-to-Source (Non repetitive current square PPK 20 W pulse 1.0ms duration) (T Initial = +85C) J Load Dump Pulse, Drain-to-Source, R = 0.5, t = 300ms) SOURCE ELD1 60 V (For Relays Coils/Inductive Loads of 80 or Higher) (T Initial = +85C) J Inductive Switching Transient 1, Drain-to-Source (Waveform: R = 10, t = 2.0ms) ELD2 100 V SOURCE (For Relays Coils/Inductive Loads of 80 or Higher) (T Initial = +85C) J Inductive Switching Transient 2, Drain-to-Source (Waveform: R = 4.0, t = 50s) ELD3 300 V SOURCE (For Relays Coils/Inductive Loads of 80 or Higher) (T Initial = +85C) J Reverse Battery, 10 Minutes (Drain-to-Source) RevBat -14 V (For Relays Coils/Inductive Loads of 80 or more) Dual Voltage Jump Start, 10 Minutes (Drain-to-Source) DualVolt 28 V ESD Human Body Model (HBM) ESD 4,000 V Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 820 mW D Thermal Resistance, Junction to Ambient (Note 6) Steady State R 154 C/W JA Total Power Dissipation (Note 7) P 1,090 mW D Thermal Resistance, Junction to Ambient (Note 7) Steady State R 116 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. copper, single sided. 2 of 7 DMN61D8LVTQ December 2016 Diodes Incorporated www.diodes.com Document number: DS37822 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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