DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D V R (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 2 V = 4V 310mA GS 60V Low Input/Output Leakage 2.5 V = 2.5V 295mA GS ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET has been designed to minimize the on- Qualified to AEC-Q101 Standards for High Reliability state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: X1-DFN1212-3 Case Material: Molded Plastic. UL Flammability Classification Applications Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Terminals: NiPdAu over Copper leadframe. Solderable per MIL- Battery Operated Systems and Solid-State Relays STD-202, Method 208 e4 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Terminal Connections: See Diagram Memories, Transistors, etc. Weight: 0.005 grams (approximate) Drain Body G pin S Diode Gate D G Gate Protection Source Diode ESD PROTECTED Top View Bottom View Pin-Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging DMN62D0LFD-7 Standard X1-DFN1212-3 3,000/Tape & Reel DMN62D0LFD-13 Standard X1-DFN1212-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN62D0LFD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 310 A Continuous Drain Current (Note 5) V = 4.0V I mA GS D 260 T = +70C A Pulsed Drain Current (Note 6) (10s pulse, duty cycle = 1%) I 1.0 A DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) 0.48 W P D 265 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 60V, V = 0V J DSS DS GS 100 nA V = 5V, V = 0V GS DS Gate-Source Leakage I 500 nA V = 10V, V = 0V GSS GS DS 2.0 A V = 15V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.6 1.0 V V = V , I = 250 A GS(th) DS GS D 1.3 2 V = 4V, I = 100mA GS D 1.4 2.5 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance R DS(ON) 1.8 3 V = 1.8V, I = 50mA GS D 2.4 V = 1.5V, I = 10mA GS D Forward Transfer Admittance Y 1.8 S V = 10V, I = 200mA fs DS D Diode Forward Voltage V 0.8 1.3 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 31 iss V = 25V, V = 0V, DS GS Output Capacitance C 4.3 pF oss f = 1.0MHz Reverse Transfer Capacitance C 3.0 rss Gate Resistance R 99 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 0.5 Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.09 nC Q gs I = 250mA D Gate-Drain Charge 0.07 Q gd Turn-On Delay Time t 2.6 ns D(on) V = 10V, V = 30V, GS DS Turn-On Rise Time t 2.1 ns r R = 150 , R = 25 , L G Turn-Off Delay Time t 18 ns D(off) I = 200mA D Turn-Off Fall Time t 8.7 ns f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 May 2014 DMN62D0LFD Diodes Incorporated www.diodes.com Document number: DS36359 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT