DMN63D1LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Dual N-Channel MOSFET I Max D BV R Max DSS DS(ON) T = +25C A Low On-Resistance 2 V = 10V GS Low Input Capacitance 60V 550mA 3 V = 5V GS Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: SOT563 Case Material: Molded Plastic, Green Molding Compound. UL Applications Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) SOT563 D G S 2 1 1 D1 D2 G1 G2 S G D 2 2 1 ESD protected Gate Gate Protection Gate Protection S1 S2 Diode Diode Top View Top View Equivalent Circuit Pin out Ordering Information (Note 4) Part Number Case Packaging DMN63D1LV-7 SOT563 3000/Tape & Reel DMN63D1LV-13 SOT563 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN63D1LV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 550 A Continuous Drain Current (Note 6) V = 10V I mA GS D State 450 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 1.2 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 450 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 283 C/W JA Total Power Dissipation (Note 6) 940 mW PD Steady State Thermal Resistance, Junction to Ambient (Note 6) 133 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 1.6 2.5 V V = 10V, I = 1mA GS(TH) DS D V = 10V, I = 0.5A 2.0 GS D Static Drain-Source On-Resistance R DS(ON) 3.0 VGS = 5V, ID = 0.05A Forward Transfer Admittance 80 mS Y V = 10V, I = 0.2A fs DS D Diode Forward Voltage 0.75 1.2 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 30 pF C iss V = 25V, V = 0V DS GS Output Capacitance 4.2 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.9 pF C rss Gate Resistance R 133 f = 1MHz, V = 0V, V = 0V g GS DS Total Gate Charge Q 392 pC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 157 pC gs I = 250mA D Gate-Drain Charge Q 92 pC gd Turn-On Delay Time t 3.9 ns D(ON) Turn-On Rise Time 3.4 ns t V = 30V, V = 10V, R DD GS Turn-Off Delay Time 15.7 ns R = 25, I = 200mA t G D D(OFF) Turn-Off Fall Time 9.9 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 October 2015 DMN63D1LV Diodes Incorporated www.diodes.com Document number: DS38194 Rev. 1 - 2 NEW PRODUCT