DMN63D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I max
D Low On-Resistance
V R max
(BR)DSS DS(ON)
T = +25C
A
Low Input Capacitance
350mA
2.8 @ V = 10V
GS
30V Fast Switching Speed
3.8 @ V = 5V 300mA
GS
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description
Halogen and Antimony Free. Green Device (Note 3)
This MOSFET is designed to minimize the on-state resistance
Qualified to AEC-Q101 Standards for High Reliability
(R ) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Mechanical Data
Applications Case: SOT23
Case Material: Molded Plastic, Green Molding
Motor Control
Compound. UL Flammability Classification Rating 94V-0
Power Management Functions
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
Terminals: Finish Matte Tin Annealed over Alloy 42
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
G S
Gate Protection
S
ESD Protected Gate Diode
Top View Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN63D8L-7 SOT23 3000/Tape & Reel
DMN63D8L-13 SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN63D8L
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 350
A
I mA
D
State 280
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 400
A
t<5s mA
I
D
310
T = +70C
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) I 1.2 A
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 350 mW
P
D
Thermal Resistance, Junction to Ambient (Note 5) Steady State 359 C/W
R
JA
Total Power Dissipation (Note 6) 520 mW
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 6) R 243 C/W
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1.0 A V = 30V, V = 0V
DSS DS GS
Gate-Source Leakage I 10.0 A V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.8 1.5 V V = V , I = 250A
GS(TH) DS GS D
2.8
V = 10.0V, I = 250mA
GS D
3.8
V = 5.0V, I = 250mA
GS D
Static Drain-Source On-Resistance 4.2
R V = 4.5V, I = 250mA
DS(ON) GS D
4.5
V = 4.0V, I = 250mA
GS D
13 V = 2.5V, I = 10mA
GS D
Forward Transconductance g 80 mS V = 10V, I = 0.115A
FS DS D
Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 115mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 23.2
iss
Output Capacitance C 3.0 pF V = 25V, V = 0V, f = 1.0MHz
oss DS GS
Reverse Transfer Capacitance C 2.2
rss
Gate Resistance 79.9
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
0.9
Total Gate Charge V = 10V Q
GS g
0.4
Total Gate Charge V = 4.5V Q V = 10V, V = 30V,
GS g GS DS
nC
Gate-Source Charge 0.1
Q ID = 150mA
gs
Gate-Drain Charge Q 0.2
gd
Turn-On Delay Time t 2.3
D(ON)
Turn-On Rise Time t 3.9
R V = 30V, I = 0.115A, V = 10V
DD D GEN ,
ns
Turn-Off Delay Time t 11.4 R = 25
D(OFF) GEN
Turn-Off Fall Time t 16.7
F
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN63D8L August 2015
Diodes Incorporated
www.diodes.com
Document number: DS38026 Rev. 1 - 2
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