DMN63D8LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET Low On-Resistance I D V R (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 200mA 4.2 V = 5V GS 30V Small Surface Mount Package 260mA 2.8 V = 10V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT563 Case Material: Molded Plastic. UL Flammability Classification Applications Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Power management functions (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc Weight: 0.006 grams (approximate) D G S SOT563 2 1 1 S G D 2 2 1 Top View Top View ESD PROTECTED Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN63D8LV-7 SOT563 3,000/Tape & Reel DMN63D8LV-13 SOT563 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN63D8LV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = 25C 260 A mA Continuous Drain Current (Note 5) V =10V I GS D State 200 T = 70C A Steady T = 25C 220 A Continuous Drain Current (Note 5) V = 5V I mA GS D State 160 T = 70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 800 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 450 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 281 C/W JA Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 30V, V = 0V DSS DS GS Gate-Body Leakage 10.0 I A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.8 1.5 V V V = V , I = 250A GS(th) DS GS D 2.8 V = 10.0V, I = 250mA GS D 3.8 V = 5.0V, I = 250mA GS D Static Drain-Source On-Resistance R 4.2 V = 4.5V, I = 250mA DS (ON) GS D 4.5 V = 4.0V, I = 250mA GS D 13 V = 2.5V, I = 10mA GS D Forward Transconductance 80 mS V = 10V, I = 0.115A g FS DS D Diode Forward Voltage - 0.8 1.2 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 22.0 C iss Output Capacitance 3.2 pF C V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 2.0 C rss Gate Resistance R 79.9 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge V = 10V Q 0.87 GS g Total Gate Charge V = 4.5V Q 0.43 GS g V = 10V, V = 30V, GS DS nC Gate-Source Charge Q 0.11 I = 150mA gs D Gate-Drain Charge Q 0.11 gd Turn-On Delay Time t 3.3 D(on) Turn-On Rise Time t 3.2 V = 30V, I = 0.115A, V = 10V r DD D GEN , nS Turn-Off Delay Time 12.0 R = 25 t GEN D(off) Turn-Off Fall Time 6.3 t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 6 August 2012 DMN63D8LV Diodes Incorporated www.diodes.com Document number: DS36022 Rev. 2 - 2 NEW PRODUCT