DMN63D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max D Low On-Resistance V R max (BR)DSS DS(ON) T = +25C A Low Input Capacitance 380mA 2.8 V = 10V GS 30V Fast Switching Speed 3.8 V = 5V 330mA GS Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT323 Case Material: Molded Plastic, Green Molding Motor Control Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: Finish Matte Tin Annealed over Alloy 42 e3 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D SOT323 D G G S Gate Protection S Diode ESD protected up to 1kV Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN63D8LW-7 SOT323 3000/Tape & Reel DMN63D8LW-13 SOT323 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN63D8LW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 380 A I mA D State 300 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 430 A t<5s mA I D 340 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) I 1.2 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 300 mW P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 426 C/W R JA Total Power Dissipation (Note 6) 420 mW P D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 301 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 10.0 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 1.5 V V = V , I = 250A GS(TH) DS GS D 2.8 V = 10.0V, I = 250mA GS D 3.8 V = 5.0V, I = 250mA GS D Static Drain-Source On-Resistance 4.2 R V = 4.5V, I = 250mA DS(ON) GS D 4.5 V = 4.0V, I = 250mA GS D 13 V = 2.5V, I = 10mA GS D Forward Transconductance g 80 mS V = 10V, I = 0.115A FS DS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 23.2 iss Output Capacitance C 3.0 pF V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 2.2 rss Gate Resistance 79.9 R V = 0V, V = 0V, f = 1.0MHz G DS GS 0.9 Total Gate Charge V = 10V Q GS g 0.4 Total Gate Charge V = 4.5V Q V = 10V, V = 30V, GS g GS DS nC Gate-Source Charge 0.1 Q ID = 150mA gs Gate-Drain Charge Q 0.2 gd Turn-On Delay Time t 2.3 D(ON) Turn-On Rise Time t 3.9 R V = 30V, I = 0.115A, V = 10V DD D GEN , ns Turn-Off Delay Time t 11.4 R = 25 D(OFF) GEN Turn-Off Fall Time t 16.7 F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN63D8LW August 2015 Diodes Incorporated www.diodes.com Document number: DS38031 Rev. 1 - 2 NEW PRODUCT NEW PRODUCT