X-On Electronics has gained recognition as a prominent supplier of DMN65D8L-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN65D8L-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN65D8L-7 Diodes Incorporated

Name: DMN65D8L-7
Brand: Diodes Incorporated
SKU: DMN65D8L7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMN65D8L-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMN65D8L-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA
Datasheet:	DMN65D8L-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1263 ea
Line Total: USD 0.13

Availability - 107495
Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

DMN65D8L-7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

11640

Ship by Thu. 13 Mar to Wed. 19 Mar

MOQ : 3000
Multiples : 3000

3000 : USD 0.0299
6000 : USD 0.02
12000 : USD 0.0187
18000 : USD 0.0185

8128

Ship by Thu. 20 Mar to Tue. 25 Mar

MOQ : 20
Multiples : 20

20 : USD 0.0404
200 : USD 0.0329
600 : USD 0.0287
3000 : USD 0.0203
9000 : USD 0.0185
21000 : USD 0.0177

107495

Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ : 1
Multiples : 1

1 : USD 0.1263
10 : USD 0.0813
100 : USD 0.0375
1000 : USD 0.031
3000 : USD 0.0253
9000 : USD 0.0176
24000 : USD 0.0165

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

310 mA 310 mA

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

3 Ohms 3 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.2 V 1.2 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

540 mW 540 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

0.87 nC 0.87 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Series

Dmn63 Dmn63

Transistor Type

1 N - Channel 1 N - Channel

Brand

Diodes Incorporated Diodes Incorporated

Forward Transconductance - Min

80 Ms 80 Ms

Cnhts

8541210000 8541210000

Fall Time

7.3 ns 7.3 ns

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Rise Time

2.8 ns 2.8 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-Off Delay Time

12.6 ns 12.6 ns

Typical Turn-On Delay Time

2.7 ns 2.7 ns

Category

MOSFET MOSFET

Brand Category

Diodes Incorporated Diodes Incorporated

Notes:- Show Stocked Products With Similar Attributes.

DMN65D8L-7 Alternative Parts

We are delighted to provide the DMN65D8L-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN65D8L-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMN65D8L-7 is a MOSFET N-Channel Enhancement Mode Field Effect Transistor (FET) manufactured by Diodes Incorporated. It has a breakdown voltage of 60V and a low on-resistance of 3Ohms. It also has a maximum drain current rating of 310mA. It is ideal for applications in which switching speed and low on-resistance is important. It can be used in power switching and signal switching applications such as DC motor drives and DC to DC converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
11640 Ship by Thu. 13 Mar to Wed. 19 Mar MOQ : 3000 Multiples : 3000	3000 : USD 0.0299 6000 : USD 0.02 12000 : USD 0.0187 18000 : USD 0.0185

8128 Ship by Thu. 20 Mar to Tue. 25 Mar MOQ : 20 Multiples : 20	20 : USD 0.0404 200 : USD 0.0329 600 : USD 0.0287 3000 : USD 0.0203 9000 : USD 0.0185 21000 : USD 0.0177

107495 Ship by Tue. 11 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 0.1263 10 : USD 0.0813 100 : USD 0.0375 1000 : USD 0.031 3000 : USD 0.0253 9000 : USD 0.0176 24000 : USD 0.0165

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