DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits N-Channel MOSFET I D V R (BR)DSS DS(ON) T = +25C A Low On-Resistance Low Gate-Threshold Voltage 400mA 3.0 V = 10V GS Low-Input Capacitance 60V 330mA 4.0 V = 5V GS Fast Switching Speed Small-Surface Mount Package ESD Protected Gate, 1.2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data Case: X1-DFN1006-3 This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound DS(ON) making it ideal for high-efficiency power-management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe Battery Operated Systems and Solid-State Relays Solderable per MIL-STD-202, Method 208 e4 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.001 grams (Approximate) Memories, Transistors, etc. Drain X1-DFN1006-3 Body Diode Gate S D Gate G Protection Source Diode ESD PROTECTED TO 1.2kV Bottom View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN65D8LFB-7 X1-DFN1006-3 3,000/Tape & Reel DMN65D8LFB-7B X1-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See X1 X1 X1 DMN65D8LFB Marking Information From date code 1527 (YYWW), X1 X1 this changes to: Top View Top View Bar Denotes Gate and Source Side Dot Denotes Drain Side DMN65D8LFB-7 X1 Top View Bar Denotes Gate and Source Side X1 = Part Marking Code DMN65D8LFB-7B 2 of 6 May 2015 DMN65D8LFB www.diodes.com Diodes Incorporated Document number: DS35545 Rev. 4 - 2 NEW PRODUCT X1 X1 X1 X1 X1 X1