DMN65D8LQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D Package V R (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage Low Input Capacitance 3 V = 10V 310mA GS 60V SOT23 Fast Switching Speed 270mA 4 V = 5V GS Small Surface Mount Package ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation MOSFET is designed to minimize the on-state Halogen and Antimony Free. Green Device (Note 3) resistance (R ), yet maintain superior switching performance, DS(ON) Qualified to AEC-Q101 Standards for High Reliability making it ideal for high-efficiency power management applications. PPAP Capable (Note 4) Applications Mechanical Data DC-DC Converters Case: SOT23 Power Management Functions Case Material: Molded Plastic. Battery Operated Systems and Solid-State Relays UL Flammability Classification Rating 94V-0 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Moisture Sensitivity: Level 1 per J-STD-020 Memories, Transistors, etc. Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating - Matte Tin Finish Annealed over Alloy 42 Leadframe). Weight: 0.006 grams (Approximate) SOT23 Drain D Gate G S Gate Protection Source Diode ESD PROTECTED TO 1kV Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMN65D8LQ-7 SOT23 3,000/Tape & Reel DMN65D8LQ-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN65D8LQ Marking Information MM6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Date Code Key Year 2011 2015 2016 2017 2018 2019 2020 2021 2022 2023 Code Y C D E F G H I J K Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 310 A Continuous Drain Current (Note 7) V = 10V I mA GS D State 240 T = +70C A Steady T = +25C 270 A mA Continuous Drain Current (Note 7) V = 5V I GS D State 210 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 800 mA I DM Maximum Body Diode Continuous Current (Note 6) 500 mA I S Thermal Characteristics Characteristic Symbol Value Units (Note 7) 370 Total Power Dissipation P mW D (Note 6) 540 (Note 7) 348 Thermal Resistance, Junction to Ambient R JA (Note 6) 241 C/W Thermal Resistance, Junction to Case (Note 6) 91 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 2 of 8 DMN65D8LQ September 2015 Diodes Incorporated www.diodes.com Document number: DS38179 Rev. 1 - 2