DMN65D9L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BVDSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 4.0 VGS = 10V 335mA Low Input/Output Leakage 60V 4.1 V = 5V 330mA ESD Protected GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.2 V = 4V 327mA GS Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes Description and Applications representative. This MOSFET is designed to minimize the on-state resistance DMN65D9L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 16 V GSS Steady TA = +25C 335 mA Continuous Drain Current (Note 6) VGS = 10V ID State 268 TA = +70C Maximum Body Diode Forward Current (Note 6) 335 mA IS 700 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I mA DM 700 Pulsed Source Current (10s Pulse, Duty Cycle = 1%) I mA SM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 270 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) 293 C/W RJA Total Power Dissipation (Note 6) 670 mW PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 186 C/W RJA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250A GS(TH) DS GS D V = 10V, I = 0.5A GS D 3.2 4.0 Static Drain-Source On-Resistance R 2.9 4.1 V = 5V, I = 0.2A DS(ON) GS D 3.0 4.2 VGS = 4V, ID = 0.2A Diode Forward Voltage 0.8 1.1 V VSD VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 41 pF Ciss V = 25V, V = 0V DS GS Output Capacitance 4.4 pF Coss f = 1.0MHz 2.6 Reverse Transfer Capacitance Crss pF 900 Gate Resistance R f = 1MHz, V = 0V, V = 0V g GS DS 0.4 Total Gate Charge Q nC g V = 4.5V, V = 10V, GS DS 0.2 Gate-Source Charge Q nC gs I = 250mA D 0.1 Gate-Drain Charge Q nC gd 3.7 Turn-On Delay Time t ns D(ON) Turn-On Rise Time 3.6 ns tR VDD = 30V, VGS = 10V, Turn-Off Delay Time 102 ns R = 25, I = 200mA tD(OFF) g D Turn-Off Fall Time 22 ns tF Reverse Recovery Time 20 ns tRR IF =1A, di/dt = 100A/s 7.9 Reverse Recovery Charge QRR nC IF = 1A, di/dt = 100A/s Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN65D9L March 2021 Diodes Incorporated www.diodes.com Document number: DS40594 Rev. 5 - 2 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT