DMN67D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET I max D Low On-Resistance V R max (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage 5.0 V = 10V 230mA GS 60V Low Input Capacitance 7.5 V = 5V 190mA GS Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Case: SOT363 Applications Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Motor Control Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D2 D1 SOT363 D G S 2 1 1 G2 G1 S G D 2 2 1 S2 S1 Top View Top View Pin out Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN67D8LDW-7 SOT363 3000/Tape & Reel DMN67D8LDW-13 SOT363 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN67D8LDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 30 V GSS Steady T = +25C 230 A Continuous Drain Current (Note 6) V = 10V I mA GS D State 180 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) 0.8 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 320 mW P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 400 C/W R JA Total Power Dissipation (Note 6) 410 mW P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 312 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 60V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.0 2.5 V V V = 10V, I = 250A GS(TH) DS D 1.5 5.0 V = 10V, I = 0.5A GS D Static Drain-Source On-Resistance R DS(ON) 3.2 7.5 V = 5V, I = 0.05A GS D Forward Transfer Admittance Y 80 mS V =10V, I = 0.2A fs DS D Diode Forward Voltage V 0.78 1.5 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 22 pF iss V = 25V, V = 0V DS GS Output Capacitance C 4.1 pF oss f = 1.0MHz Reverse Transfer Capacitance 2.5 pF Crss Gate Resistance 120 R f = 1.0MHz , V = 0V, V = 0V g GS DS 361 pC Total Gate Charge (V = 4.5V) Q GS g 821 pC Total Gate Charge (V = 10V) Q V = 4.5V, V = 10V, GS g GS DS Gate-Source Charge 162 pC I = 250mA Q D gs Gate-Drain Charge Q 116 pC gd Turn-On Delay Time t 2.8 ns D(ON) Turn-On Rise Time t 3.0 ns R V = 30V, I = 0.2A, DD D Turn-Off Delay Time t 7.6 ns R = 150, V = 10V, R = 25 D(OFF) L GS G Turn-Off Fall Time t 5.6 ns F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN67D8LDW August 2015 Diodes Incorporated www.diodes.com Document number: DS38034 Rev. 1 - 2 NEW PRODUCT NEW PRODUCT