DMN7022LFG 75V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A 22m V = 10V 7.8A density end products GS 75V 28m V = 4.5V 6.9A Occupies just 33% of the board area occupied by SO-8 enabling GS smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Backlighting Case: POWERDI 3333-8 Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) POWERDI 3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN7022LFG-7 2,000/Tape & Reel POWERDI 3333-8 DMN7022LFG-13 3,000/Tape & Reel POWERDI 3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN7022LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 75 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 7.8 A A I D State 6.2 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 10.5 A t<10s I A D 8.4 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 56 A DM Maximum Continuous Body Diode Forward Current (Note 6) 2.1 A I S Avalanche Current, L = 0.1mH 28.8 A I AS Avalanche Energy, L = 0.1mH 42.2 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.9 W D Steady state 125 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 67 Total Power Dissipation (Note 6) P 2 W D Steady state 62 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 6) R 6.9 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 75 V BV V = 0V, I = 250 A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 75V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250 A GS(th) DS GS D 14.6 22 V = 10V, I = 7.2A GS D Static Drain-Source On-Resistance R m DS(ON) 20.5 28 V = 4.5V, I = 6.4A GS D Diode Forward Voltage V 0.72 V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 2737 pF iss V = 35V, V = 0V, DS GS Output Capacitance C pF oss 126 f = 1MHz Reverse Transfer Capacitance C pF rss 96.1 Gate Resistance 0.89 R V = 0V, V = 0V, f = 1MHz g DS GS 26.4 nC Total Gate Charge (V = 4.5V) Q GS g 56.5 nC Total Gate Charge (V = 10V) Q GS g V = 38V, I = 7.2A DS D Gate-Source Charge 12 nC Q gs Gate-Drain Charge 11.8 Q nC gd 6.1 Turn-On Delay Time t ns D(on) 5.7 Turn-On Rise Time t ns V = 10V, V = 38V, r GS DS 19.6 Turn-Off Delay Time t ns R = 1 , I = 5.7A D(off) G D 3.9 Turn-Off Fall Time t ns f Body Diode Reverse Recovery Time t 26.2 ns rr I = 5.7A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q nC rr 25.2 Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 6 July 2014 DMN7022LFG Diodes Incorporated www.diodes.com Document number: DS37008 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT