DMN90H2D2HCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low Input Capacitance
I
BV (@ T Max) D
DSS J
R
DS(ON)
High BV Rating for Power Application
(Note 7) T = +25C DSS
C
Low Input/Output Leakage
1000V 2.2@V = 10V 6A
GS
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Mechanical Data
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
Case: ITO220AB (Type TH)
applications.
Case Material: Molded Plastic, Green Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed Over Copper Leadframe.
Applications
Solderable per MIL-STD-202, Method 208
Motor Control Terminal Connections: See Diagram Below
Backlighting
Weight: 1.85 grams (Approximate)
DC-DC Converters
Power Management Functions
ITO220AB (Type TH)
Top View
Bottom View
Top View
Pin Out Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN90H2D2HCTI ITO220AB (Type TH) 50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMN90H2D2HCTI
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 900 V
V
DSS
Gate-Source Voltage 30 V
V
GSS
Continuous Drain Current (Notes 5)
T = +25C 6
C
I A
D
4
V = 10V (Note 6) T = +100C
GS C
Pulsed Drain Current I 24 A
DM
Avalanche Current, L = 60mH (Note 7) I 3.5 A
AS
Avalanche Energy, L = 60mH (Note 7) 360 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Max Unit
40
T = +25C
C
Power Dissipation (Note 5) W
P
D
14
T = +100C
C
3.6
Thermal Resistance, Junction to Case (Note 5) T = +25C R C/W
C JC
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 900 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 900V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 30V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 3 4 5 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 1.7 2.2
R V = 10V, I = 3A
DS(ON) GS D
Diode Forward Voltage 0.85 1.2 V
V V = 0V, I = 6A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance 1487
C
iss
V = 25V, f = 1MHz,
DS
Output Capacitance 113 pF
C
oss
V = 0V
GS
1
Reverse Transfer Capacitance C
rss
4.7
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
20.3
Total Gate Charge Q
g
V = 720V, I = 6A,
DD D
6.4
Gate-Source Charge Q nC
gs
V = 10V
GS
6.1
Gate-Drain Charge
Q
gd
39
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time 49
t V = 450V, V = 10V,
R DD GS
ns
Turn-Off Delay Time 51 R = 25, I = 6A
t g D
D(OFF)
Turn-Off Fall Time 31
t
F
607
Body Diode Reverse Recovery Time t ns
RR
I = 6A, dI/dt = 100A/s
F
8.1
Body Diode Reverse Recovery Charge Q C
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Drain current limited by maximum junction temperature.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
2 of 7
September 2016
DMN90H2D2HCTI
www.diodes.com Diodes Incorporated
Document number: DS38826 Rev. 4 - 2
ADVANCED INFORMATION