DMN95H8D5HCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low Input Capacitance
I
D
BV (@ T Max) R
DSS J DS(ON)
High BV Rating for Power Application
T = +25C DSS
C
Low Input/Output Leakage
1000V 7@V = 10V 2.5A
GS
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
This new generation MOSFET features low on-resistance and fast
Mechanical Data
switching, making it ideal for high efficiency power management
applications.
Case: TO220AB (Type TH)
Case Material: Molded Plastic, Green Molding Compound, UL
Flammability Classification Rating 94V-0
Applications
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Motor Control
Solderable per MIL-STD-202, Method 208
Backlighting
Terminal Connections: See Diagram Below
DC-DC Converters
Weight: 1.85 grams (Approximate)
Power Management Functions
TO220AB (Type TH)
Top View
Bottom View
Top View
Pin Out Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN95H8D5HCT TO220AB (Type TH) 50 pieces/tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMN95H8D5HCT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 950 V
DSS
Gate-Source Voltage V 30 V
GSS
Steady T = +25C 2.5
C
Continuous Drain Current V = 10V I A
GS D
State 1.5
T = +100C
C
Maximum Body Diode Forward Current (Note 5) 3 A
I
S
Pulsed Drain Current (10 s pulse, duty cycle = 1%) 3 A
I
DM
Avalanche Current, L = 60mH (Note 7) 1.8 A
I
AS
Avalanche Energy, L = 60mH (Note 7) 97 mJ
E
AS
Peak Diode Recovery dv/dt dv/dt 3.3 V/ns
Thermal Characteristics
Characteristic Symbol Value Units
T = +25C 125
C
Total Power Dissipation W
P
D
50
T = +100C
C
Thermal Resistance, Junction to Ambient (Note 6) 50
R
JA
C/W
Thermal Resistance, Junction to Case 1
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 950 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 950V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 30V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 3.0 4.0 5.0 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 5.5 7 V = 10V, I = 1A
DS(ON) GS D
Diode Forward Voltage V 0.84 1.2 V V = 0V, I = 2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance C 470
iss
V = 25V, f = 1.0MHz,
DS
Output Capacitance C 45 pF
oss
V = 0
GS
Reverse Transfer Capacitance C 0.6
rss
Gate Resistance R 1.2 V = 0V, V = 0V, f = 1.0MHz
G DS GS
Total Gate Charge 7.9
Q
g
V = 720V, I = 2A,
DD D
Gate-Source Charge 2.5 nC
Q
gs
V = 10V
GS
Gate-Drain Charge 2.9
Q
gd
Turn-On Delay Time 16
t
D(ON)
Turn-On Rise Time t 21 V = 450V, R = 25 , I = 2A,
R DD G D
ns
Turn-Off Delay Time t 17.6 V = 10V
D(OFF) GS
Turn-Off Fall Time t 17
F
Body Diode Reverse Recovery Time t 375 ns
RR dI/dt = 100A/s, V = 100V,
DS
Body Diode Reverse Recovery Charge Q 2.9 I = 2A
RR F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
2 of 7
August 2016
DMN95H8D5HCT
www.diodes.com Diodes Incorporated
Document number: DS38905 Rev. 2 - 2