Green
DMNH10H028SCT
100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I max
D
BV R max
DSS DS(ON)
Environments
T = +25C
C
100% Unclamped Inductive Switching ensures more reliable
100V 28m @ V = 10V 60A
GS
and robust end application
Low Input Capacitance
Description
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
This new generation MOSFET features low on-resistance and fast
Halogen and Antimony Free. Green Device (Note 3)
switching, making it ideal for high efficiency power management
Qualified to AEC-Q101 Standards for High Reliability
applications.
Mechanical Data
Applications
Case: TO220AB
Motor Control
Case Material: Molded Plastic, Green Molding Compound, UL
Backlighting
Flammability Classification Rating 94V-0
DC-DC Converters
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Power Management Functions
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO220AB 1.85 grams (Approximate)
D
TO220AB
G
S
Top View
Top View Bottom View Equivalent Circuit Pin Out Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMNH10H028SCT TO220AB 50 pieces/tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH10H028SCT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 100 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 60
C
A
Continuous Drain Current, V = 10V I
GS D
42
TC = +100C
90 A
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I
DM
Maximum Continuous Body Diode Forward Current (Note 5) 2.8 A
I
S
Avalanche Current, L = 0.1mH 27 A
I
AS
Avalanche Energy, L = 0.1mH 37 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 2.8 W
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5) 54 C/W
R
JA
Thermal Resistance, Junction to Case 1 C/W
R
JC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage 100 V
BV V = 0V, I = 250A
DSS GS D
1 A
Zero Gate Voltage Drain Current, T = +25C I V = 100V, V = 0V
J DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V 2.0 2.8 4.0 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 19 28 m V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance C 1942 pF
iss
V = 50V, V = 0V,
DS GS
Output Capacitance C pF
oss 166
f = 1MHz
Reverse Transfer Capacitance pF
C 47
rss
Gate Resistance
R 1.8 V = 0V, V = 0V, f = 1MHz
g DS GS
nC
Total Gate Charge (V = 8V) Q 25.4
GS g
nC
Total Gate Charge (V = 10V) Q 31.9
GS g
V = 50V, I = 20A
DS D
Gate-Source Charge nC
Q 8.1
gs
Gate-Drain Charge Q 6.5 nC
gd
Turn-On Delay Time t 7.1 ns
D(ON)
Turn-On Rise Time t 6.6 ns
R V = 10V, V = 50V,
GS DS
Turn-Off Delay Time t 14.0 ns R = 3, I = 20A
D(OFF) G D
Turn-Off Fall Time t ns
F 3.2
Body Diode Reverse Recovery Time ns
t 35.3 I = 20A, di/dt = 100A/s
RR F
Body Diode Reverse Recovery Charge nC
Q 46.8 I = 20A, di/dt = 100A/s
RR F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2 of 7
April 2016
DMNH10H028SCT
www.diodes.com Diodes Incorporated
Document number: DS38674 Rev. 2 - 2
ADVANCED INFORMATION