DMNH10H028SK3
Green
100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I max
D
V R max
(BR)DSS DS(ON)
Environments
T = +25C
C
100V 55A
28m @ V = 10V 100% Unclamped Inductive Switching Ensures More Reliable
GS
and Robust End Application
Low R Minimises Power Losses
DS(ON)
Description
Low Q Minimises Switching Losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
This new generation MOSFET features low on-resistance and fast
Halogen and Antimony Free. Green Device (Note 3)
switching, making it ideal for high-efficiency power management
Qualified to AEC-Q101 Standards for High Reliability
applications.
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH10H028SK3Q)
Applications Mechanical Data
Case: TO252
Engine Management Systems
Case Material: Molded Plastic, Green Molding Compound.
Body Control Electronics
UL Flammability Classification Rating 94V-0
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View Equivalent Circuit
Pin Out Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMNH10H028SK3-13 TO252 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH10H028SK3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 100 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 55
C
A
Continuous Drain Current, VGS = 10V ID
39
T = +100C
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 58 A
DM
Maximum Continuous Body Diode Forward Current (Note 5) I 2.2 A
S
Avalanche Current, L = 0.1mH 29 A
IAS
Avalanche Energy, L = 0.1mH 43 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.0 W
P
D
Steady State 74
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 25
Total Power Dissipation (Note 6) 3.7 W
P
D
Steady State 40
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 13
C/W
Thermal Resistance, Junction to Case 1.2
R
JC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 100 V
BV V = 0V, I = 250A
DSS GS D
1 A
Zero Gate Voltage Drain Current, T = +25C I V = 100V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 2.0 2.5 3.3 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 20 28 m
R V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 2245 pF
iss
V = 50V, V = 0V,
DS GS
Output Capacitance C 173 pF
oss
f = 1MHz
Reverse Transfer Capacitance C 68 pF
rss
Gate Resistance R 1.9 V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge (V = 10V) Q 36 nC
GS g
nC
Total Gate Charge (V = 6V) Q 22
GS g
V = 50V, I = 20A
DS D
Gate-Source Charge nC
Q 7.3
gs
Gate-Drain Charge nC
Q 9.2
gd
Turn-On Delay Time ns
t 6.4
D(ON)
Turn-On Rise Time t 5.8 ns V = 10V, V = 50V,
R GS DS
Turn-Off Delay Time t 17.8 ns R = 3, I = 20A
D(OFF) G D
Turn-Off Fall Time t 4.8 ns
F
Body Diode Reverse Recovery Time t 35 ns I = 20A, di/dt = 100A/s
RR F
Body Diode Reverse Recovery Charge Q 47 nC I = 20A, di/dt = 100A/s
RR F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMNH10H028SK3 October 2015
Diodes Incorporated
www.diodes.com
Document number: DS37383 Rev. 3 - 2
NEW PRODUCT