Green DMNH10H028SK3Q 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I max D V R max (BR)DSS DS(ON) Environments T = +25C C 100V 55A 28m V = 10V 100% Unclamped Inductive Switching Ensures More Reliable GS and Robust End Application Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: TO252 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Engine Management Systems Moisture Sensitivity: Level 1 per J-STD-020 Body Control Electronics Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 5) Part Number Case Packaging DMNH10H028SK3Q-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMNH10H028SK3Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 55 C A Continuous Drain Current, V = 10V I GS D 39 T = +100C C 58 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I DM Maximum Continuous Body Diode Forward Current (Note 6) 2.2 A I S Avalanche Current, L = 0.1mH 29 A I AS Avalanche Energy, L = 0.1mH E 43 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 2.0 W D Steady State 74 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 25 Total Power Dissipation (Note 7) P 3.7 W D Steady State 40 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 13 C/W Thermal Resistance, Junction to Case 1.2 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current, T = +25C I 1 A V = 100V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 2.0 2.5 4.0 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 20 28 m V = 10V, I = 20A DS(ON) GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance pF Ciss 2,245 VDS = 50V, VGS = 0V, Output Capacitance pF C 173 oss f = 1MHz Reverse Transfer Capacitance pF C 68 rss Gate Resistance R 1.9 V = 0V, V = 0V, f = 1MHz g DS GS nC Total Gate Charge (V = 10V) Q 36 GS g Total Gate Charge (V = 6V) Q 22 nC GS g V = 50V, I = 20A DS D Gate-Source Charge Q 7.3 nC gs Gate-Drain Charge Q 9.2 nC gd Turn-On Delay Time t 6.4 ns D(ON) Turn-On Rise Time t 5.8 ns R V = 10V, V = 50V, GS DS Turn-Off Delay Time ns R = 3, I = 20A tD(OFF) 17.8 G D Turn-Off Fall Time ns t 4.8 F Body Diode Reverse Recovery Time ns t 35 I = 20A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge nC Q 47 I = 20A, di/dt = 100A/s RR F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH10H028SK3Q October 2015 Diodes Incorporated www.diodes.com Document number: DS38225 Rev. 1 - 2 ADVANCED INFORMATION NEW PRODUCT