DMNH4011SPSQ
Green
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary Features and Benefits
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R max
DSS DS(ON)
Environments
T = +25C
C
100% Unclamped Inductive Switching Ensures More Reliable
40V 10m @ V = 10V 80A
GS
and Robust End Application
Low Q Minimizes Switching Loss
g
Low R Minimizes On State Loss
DS(ON)
Description and Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3)
Automotive applications. It is qualified to AEC-Q101, supported by a
Qualified to AEC-Q101 Standards for High Reliability
PPAP and is ideal for use in:
PPAP Capable (Note 4)
Engine Management Systems
Mechanical Data
DC-DC Converters
Body Control Electronics
Case: PowerDI 5060-8
Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe,
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D
Pin1
S
D
D
S
G D
Top View
Top View Bottom View Internal Schematic Pin Configuration
Ordering Information (Note 5)
Part Number Case Packaging
DMNH4011SPSQ-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH4011SPSQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 13
A
I A
D
10.8
T = +70C
A
Continuous Drain Current (Note 7) V = 10V 80
GS T = +25C
C
A
I
T = +100C D
C
57
(Note 8)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 90 A
DM
Maximum Continuous Body Diode Forward Current (Note 6) I 80 A
S
Pulsed Source Current (10s Pulse, Duty Cycle = 1%) I A
SM
Avalanche Current, L = 1mH I A
AS
Avalanche Energy, L = 1mH mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) T = +25C P 2.5 W
A D
Thermal Resistance, Junction to Ambient (Note 6) R 60 C/W
JA
Total Power Dissipation (Note 7) T = +25C P 150 W
C D
Thermal Resistance, Junction to Case (Note 7) R 1 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 40 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 40V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 2 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 8.5 10 m V = 10V, I = 50A
DS(ON) GS D
Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 50A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
1405
Input Capacitance C
iss
247
Output Capacitance pF
Coss VDS = 20V, VGS = 0V, f = 1MHz
108
Reverse Transfer Capacitance
C
rss
Gate Resistance 2.2
R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge 25.5
Q
g
Gate-Source Charge 4.6 nC
Q V = 20V, V = 10V, I = 50A
gs DS GS D
Gate-Drain Charge 6.9
Q
gd
4.6
Turn-On Delay Time t
D(ON)
3.7
Turn-On Rise Time t
R V = 20V, V = 10V,
DD GS
ns
16
Turn-Off Delay Time t I = 50A, R = 3.5
D(OFF) D G
5.1
Turn-Off Fall Time t
F
Body Diode Reverse Recovery Time 22.1 ns
tRR
IF = 50A, di/dt = 100A/s
Body Diode Reverse Recovery Charge 13.4 nC
Q
RR
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
2 of 7
DMNH4011SPSQ June 2017
Diodes Incorporated
www.diodes.com
Document number: DS38693 Rev. 3 - 2