Green
DMNH6008SPSQ
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
I Thermally Efficient Package-Cooler Running Applications
D
BV R
DSS DS(ON)
T = +25C
A High Conversion Efficiency
60V 16.5A
8.0m @ V = 10V
GS
Low R Minimizes On State Losses
DS(ON)
Low Input Capacitance
Fast Switching Speed
Description and Applications
<1.1mm Package Profile Ideal for Thin Applications
This MOSFET is designed to meet the stringent requirements of
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Automotive applications. It is qualified to AEC-Q101, supported by a
Halogen and Antimony Free. Green Device (Note 3)
PPAP and is ideal for use in:
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Motor Control
DC-DC Converters
Mechanical Data
Power Management
Case: PowerDI5060-8
Case Material: Molded Plastic,Gree Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D
PowerDI5060-8
S
D
S D
Pin1
D
S
G
D
G
Top View
S
Top View Pin Configuration
Bottom View Internal Schematic
Ordering Information (Note 5)
Part Number Case Packaging
DMNH6008SPSQ-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH6008SPSQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage V
V 20
GSS
Steady T = +25C 16.5
A
I A
D
State 11.7
T = +100C
A
Continuous Drain Current (Note 7) V = 10V
GS
T = +25C
Steady C 88
A
I
D
State 63
T = +100C
C
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 140 A
I
DM
Maximum Continuous Body Diode Forward Current (Note 7) 90 A
I
S
62
Avalanche Current (Note 8) L=0.1mH I A
AS
194
Avalanche Energy (Note 8) L=0.1mH E mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) P 1.6 W
D
Steady State
Thermal Resistance, Junction to Ambient (Note 6) 95 C/W
R
JA
Total Power Dissipation (Note 7) P 3.3 W
D
Steady State
Thermal Resistance, Junction to Ambient (Note 7) 46
R
JA
C/W
Thermal Resistance, Junction to Case (Note 7) 1.6
R
JC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage 2 4 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 6.0 8.0
R m V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage V 1.2 V
SD V = 0V, I = 1A
GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance C 2597
iss
V = 30V, V = 0V
DS GS
437
Output Capacitance C pF
oss
f = 1.0MHz
118
Reverse Transfer Capacitance C
rss
Gate Resistance R 2.0 V = 0V, V = 0V, f = 1.0MHz
g DS GS
40.1
Total Gate Charge (V = 10V) Q
GS g
21.2
Total Gate Charge (V = 4.5V) Q
GS g
nC V = 30V, I = 20A
DD D
Gate-Source Charge 8.3
Q
gs
Gate-Drain Charge 11.8
Q
gd
Turn-On Delay Time 5.7
t
D(ON)
Turn-On Rise Time 5.0
t V = 30V, V = 10V,
R DD GS
ns
15.6
Turn-Off Delay Time t R = 1, I = 20A
D(OFF) g D
3.3
Turn-Off Fall Time t
F
33
Reverse Recovery Time t ns
RR
I = 20A, di/dt = 100A/s
F
33
Reverse Recovery Charge Q nC
RR
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
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DMNH6008SPSQ April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38772 Rev. 1 - 2