DMNH6042SK3Q Green 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 50m V = 10V 25A GS 60V and Robust End Application 65m V = 4.5V 22A GS Low On-Resistance Low Input Capacitance Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3) Automotive applications. It is qualified to AEC-Q101, supported up by Qualified to AEC-Q101 Standards for High Reliability a PPAP and is ideal for use in: PPAP Capable (Note 4) Driving Solenoids Mechanical Data Driving Relays Power Management Functions Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMNH6042SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMNH6042SK3Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 25 C Continuous Drain Current (Note 8) V = 10V I A GS D State 17 T = +70C C Pulsed Drain Current (10s pulse, duty cycle = 1%) 40 A I DM Maximum Continuous Body Diode Forward Current (Note 8) 25 A I S Avalanche Current (Note 9) L = 10mH 3.5 A I AS Avalanche Energy (Note 9) L = 10mH 65 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 2 W D Steady State 73 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 36 Total Power Dissipation (Note 7) P 3.5 W D Steady State 43 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 21 C/W Thermal Resistance, Junction to Case (Note 8) R 3.2 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 30 50 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) 45 65 V = 4.5V, I = 6A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 2.6A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance pF C 584 iss V = 25V, V = 0V, DS GS Output Capacitance pF C 83 oss f = 1.0MHz Reverse Transfer Capacitance C 24 pF rss 3.8 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 4.2 Total Gate Charge (V = 4.5V) Q nC GS g 8.8 Total Gate Charge (V = 10V) Q nC GS g V = 44V, I = 5.2A DS D 1.8 Gate-Source Charge Q nC gs 1.8 Gate-Drain Charge nC Q gd Turn-On Delay Time 3.4 ns t D(ON) Turn-On Rise Time 1.9 ns t V = 10V, V = 30V, R GS DS Turn-Off Delay Time 10.1 ns R = 6, I = 1A t G D D(OFF) Turn-Off Fall Time 4.5 ns t F Body Diode Reverse Recovery Time t 12.9 ns RR I = 2.6A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 5.4 nC RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6042SK3Q August 2016 Diodes Incorporated www.diodes.com Document number: DS38902 Rev. 2 - 2