Green DMNH6042SPS 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 24A 50m V = 10V GS 60V and Robust End Application 65m V = 4.5V 21A GS Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Description and Applications Datasheet (DMNH6042SPSQ) This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Mechanical Data Case: PowerDI5060-8 Engine Management Systems Case Material: Molded Plastic,Gree Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D D S D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMNH6042SPS-13 PowerDI5060-8 2500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMNH6042SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 24 C Continuous Drain Current (Note 7) V = 10V I A GS D State 17 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 35 A I DM Maximum Continuous Body Diode Forward Current (Note 7) 24 A I S Avalanche Current (Note 8) L = 10mH 3.5 A I AS Avalanche Energy (Note 8) L = 10mH E 65 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.5 W D Steady state 98 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 54 Total Power Dissipation (Note 6) P 2.9 W D Steady state 51 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 26 C/W Thermal Resistance, Junction to Case (Note 7) 3.5 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 34 50 V = 10V, I = 5.1A GS D Static Drain-Source On-Resistance m R DS(ON) 45 65 V = 4.5V, I = 4.4A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 2.6A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance pF C 584 iss V = 25V, V = 0V, DS GS Output Capacitance pF C 83 oss f = 1.0MHz Reverse Transfer Capacitance pF C 24 rss Gate Resistance 3.8 R V = 0V, V = 0V, f = 1MHz g DS GS 4.2 Total Gate Charge (V = 4.5V) Q nC GS g 8.8 Total Gate Charge (V = 10V) Q nC GS g V = 44V, I = 5.2A DS D 1.8 Gate-Source Charge Q nC gs 1.8 Gate-Drain Charge Q nC gd 3.4 Turn-On Delay Time t ns D(ON) 1.9 Turn-On Rise Time ns t V = 10V, V = 30V, R GS DS Turn-Off Delay Time 10.1 ns R = 6, I = 1A t G D D(OFF) Turn-Off Fall Time 4.5 ns t F Body Diode Reverse Recovery Time 12.9 ns t I = 2.6A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge 5.4 nC Q I = 2.6A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. PowerDI is a registered trademark of Diodes Incorporated. 2 of 7 DMNH6042SPS July 2016 Diodes Incorporated www.diodes.com Document number: DS38683 Rev. 1 - 2 ADVANCE INFORMATION ADVANCED INFORMATION