DMP1012UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ V = -4.5V, T = +25C) Features
GS A
LD-MOS Technology with the Lowest Figure of Merit:
V R Q Q I
DSS DS(on) g gd D
R = 8.2m to Minimize On-State Losses
DS(on)
-8V 8.2m 8.1nC 1.8nC -10A Q = 8.1nC for Ultra-Fast Switching
g
V = -0.8V typ. for a Low Turn-On Potential
gs(th)
CSP with Footprint 1.5mm 1.5mm
Description
Height = 0.62mm for Low Profile
rd
ESD = 6kV HBM Protection of Gate
This 3 generation Lateral MOSFET (LD-MOS) is engineered to
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
minimize on-state losses and switch ultra-fast, making it ideal for high
Halogen and Antimony Free. Green Device (Note 3)
efficiency power transfer. It uses Chip-Scale Package (CSP) to
Qualified to AEC-Q101 Standards for High Reliability
increase power density by combining low thermal impedance with
minimal R per footprint area.
DS(on)
Mechanical Data
Applications
Case: U-WLB1515-9
DC-DC Converters
Terminal Connections: See Diagram Below
Battery Management
Load Switch
U-WLB1515-9
G S S
S S S
D D D
Top-View
Equivalent Circuit
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMP1012UCB9-7 U-WLB1515-9 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP1012UCB9
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage -8 V
V
DSS
Gate-Source Voltage -6 V
V
GSS
Steady T = +25C -10
A
Continuous Drain Current (Note 5) V = -4.5V I A
GS D
State -8
T = +70C
A
Steady T = +25C -7.4
A
Continuous Drain Current (Note 6) V = -4.5V I A
GS D
State -6.0
T = +70C
A
Pulsed Drain Current (Pulse duration 10s, duty cycle 1%) -50 A
I
DM
Continuous Source Pin Current (Note 6) IS -2
Pulsed Source Pin Current (Pulse duration 10s, duty cycle 1%) ISM -15
-0.5 A
Continuous Gate Current I
G
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 0.89 W
P
D
Total Power Dissipation (Note 6) 1.57 W
P
D
Thermal Resistance, Junction to Ambient (Note 5) +142.1 C/W
R
JA
Thermal Resistance, Junction to Ambient (Note 6) R +80.5 C/W
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage -8 V
BV V = 0V, I = -250A
DSS GS D
Gate to Source Voltage -6 V
BV V = 0V, I = -250A
SGS DS G
-1 A
Zero Gate Voltage Drain Current @T = +25C I V = -4.0V, V = 0V
C DSS DS GS
Gate-Source Leakage -100 nA
I V = -4.0V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage -0.4 -0.8 -1.1 V
V V = V , I = -250A
GS(th) DS GS D
8.2 10 V = -4.5V, I = -2A
GS D
Static Drain-Source On-Resistance R 10 13 m V = -3.0V, I = -2A
DS (ON) GS D
11 14 V = -2.5V, I = -2A
GS D
Forward Transfer Admittance |Y | 16.8 S V = -4V, I = -2A
fs DS D
Diode Forward Voltage (Note 6) V -0.7 -1 V V = 0V, I = -2A
SD GS S
6.3
Reverse Recovery Charge nC
Qrr V = -5V, I = -2A,
dd F
Reverse Recovery Time 18.5 ns di/dt = 200A/s
t
rr
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 817 1060 pF
C
iss
V = -4V, V = 0V,
DS GS
Output Capacitance 595 770 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 269 350 pF
C
rss
1.9
Series Gate Resistance R V = 0V, V = 0V, f = 1.0MHz
G DS GS
8.1 10.5
Total Gate Charge (4.5V) Q nC
g
V = -4.5V, V = -4V,
GS DS
0.9
Gate-Source Charge Q nC
gs
I = -2A
D
1.8
Gate-Drain Charge Q nC
gd
6.2 10
Turn-On Delay Time t ns
D(on)
22.6
Turn-On Rise Time t ns
r V = -4V, V = -4.5V,
DD GS
Turn-Off Delay Time 30.1 48 ns I = -2A, R = 10,
t DS G
D(off)
Turn-Off Fall Time 22.7 ns
t
f
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
2 2
6. Device mounted on FR4 material with 1-inch (6.45cm ), 2oz (0.071mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6
January 2015
DMP1012UCB9
Diodes Incorporated
www.diodes.com
Document number: DS36844 Rev. 7 - 2
NEW PRODUCT
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