DMP1022UFDEQ 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal For Low Profile Applications I Max D 2 BVDSS RDS(ON) Max PCB Footprint of 4mm T = +25C A Low Gate Threshold Voltage 16m VGS = -4.5V -9.1A Fast Switching Speed ESD Protected to 3kV 21.5m V = -2.5V -7.9A GS -12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 26m V = -1.8V -7.0A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 32m V = -1.5V -6.3A GS PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: U-DFN2020-6 (Type E) Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Engine Management Systems Terminals: Finish NiPdAu over Copper Leadframe. Solderable DC-DC Converters per MIL-STD-202, Method 208 e4 Body Control Electronics Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type E) D 6 D D 1 Pin1 5 D D 2 G 4 S S G 3 ESD PROTECTED Gate Protection Pin Out S Bottom View Diode Bottom View Internal Schematic Ordering Information (Note 5) Part Number Marking Reel Size (inches) Quantity Per Reel DMP1022UFDEQ-7 P4 7 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1022UFDEQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -9.1 A I A D State -7.2 T = +70C A Continuous Drain Current (Note 7) V = -4.5V GS T = +25C -11.2 A t<5s A I D -9.0 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -90 A DM T = +25C -2.5 A Continuous Source-Drain Diode Current A I S -7.1 T = +25C C Pulsed Source-Drain Diode Current (10s Pulse, Duty Cycle = 1%) -50 A I SM Thermal Characteristics Characteristic Symbol Value Unit T = +25C 0.66 A Total Power Dissipation (Note 6) W P D T = +70C 0.42 A Steady State 189 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<5s 123 T = +25C 2.03 A Total Power Dissipation (Note 7) W P D T = +70C 1.3 A Steady State 61 Thermal Resistance, Junction to Ambient (Note 7) R JA t<5s 40 C/W Thermal Resistance, Junction to Case (Note 6) Steady State R 9.3 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 2 of 8 September 2017 DMP1022UFDEQ www.diodes.com Diodes Incorporated Datasheet number: DS40125 Rev. 2 - 2