DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on) max T = +25C Low Input Capacitance A Fast Switching Speed 31m V = -4.5V 5.2A GS -12V Low Input/Output Leakage 45m V =-2.5V 4.3A GS ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET has been designed to minimize the on- Qualified to AEC-Q101 Standards for High Reliability state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Applications Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Terminal Connections: See Diagram Analog Switch Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.0072 grams (approximate) Drain SOT23 D Gate Gate Protection Source ESD PROTECTED TO 3kV S G Diode Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP1045U-7 SOT-23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1045U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 4.0 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State 3.1 T = +70C A Steady T = +25C 3.3 A A Continuous Drain Current (Note 5) V = -2.5V I GS D State 2.6 T = +70C A Steady T = +25C 5.2 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State 4.2 T = +70C A Steady T = +25C 4.3 A A Continuous Drain Current (Note 6) V = -2.5V I GS D State 3.4 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 2 A S Pulsed Drain Current (10s pulse, duty cycle=1%) (Note 5) I 40 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.8 W P D Thermal Resistance, Junction to Ambient (Note 5) R 168 C/W JA Total Power Dissipation (Note 6) P 1.3 W D Thermal Resistance, Junction to Ambient (Note 6) 99 C/W R JA Thermal Resistance, Junction to Case (Note 6) 14.8 C/W R Jc Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMinTypMaxUnit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -12 V BV V = 0V, I = -250A DSS GS D -1.0 A Zero Gate Voltage Drain Current T = +25C I V = -12V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.3 -0.55 -1.0 V V V = V , I = -250A GS(th) DS GS D 26 31 V = -4.5V, I = -4.0A GS D Static Drain-Source On-Resistance R 31 45 m V = -2.5V, I = -3.5A DS(ON) GS D 45 75 V = -1.8V, I = -2.7A GS D Forward Transfer Admittance Y 12 S V = -5V, I = -4A fs DS D Diode Forward Voltage V -0.6 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1357 pF iss V = -10V, V = 0V DS GS Output Capacitance C 504 pF oss f = 1.0MHz Reverse Transfer Capacitance 235 pF C rss Gate Resistnace 14.1 R V = 0V, V = 0V, f = 1.0MHz g DS GS SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge 15.8 nC Q g Gate-Source Charge 2.0 nC Q V = -4.5V, V = -10V, I = -4A gs GS DS D Gate-Drain Charge 3.9 nC Q gd Turn-On Delay Time t 15.7 ns D(on) Turn-On Rise Time t 23.3 ns r V = -10V, V = -4.5V, DS GS R = 2.5, R = 3.0 Turn-Off Delay Time t 91.2 ns L G D(off) Turn-Off Fall Time t 106.9 ns f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 October 2013 DMP1045U Diodes Incorporated www.diodes.com Document number: DS35051 Rev. 4 - 2 NEW PRODUCT