DMP1045UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Low Input Capacitance D V R (BR)DSS DS(on) max T = 25C Fast Switching Speed A -5.5A Low Input/Output Leakage 32m V = -4.5V GS -12V -4.5A ESD Protected Up To 3kV 45m V = -2.5V GS -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 75m V = -1.8V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(on) Case: X2-DFN2015-3 performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish NiPdAu over Copper leadframe. Solderable DC-DC Converters e4 per MIL-STD-202, Method 208 Power management functions Weight: 0.008 grams (approximate) Analog Switch X2-DFN2015-3 S D G Top View Bottom View ESD PROTECTED TO 3kV Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP1045UFY4-7 X2-DFN2015-3 3,000/Tape & Reel DMP1045UFY4-13 X2-DFN2015-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1045UFY4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -5.5 A A State = +70C -4.3 T A Continuous Drain Current V = -4.5V (Note 6) I GS D T = +25C -6.5 A t<5s A -5.1 T = +70C A -2.2 Maximum Continuous Body Diode Forward Current (Note 6) I A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I -25 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.7 T = +25C A Power Dissipation (Note 5) P W D T = +70C 0.4 A Steady state 193 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 135 T = +25C 1.7 A Power Dissipation (Note 6) P W D 1.1 T = +70C A Steady state 73 Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 52 C/W Thermal Resistance, Junction to Case (Notes 6) Steady state 17 R JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -12 - - V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - -1.0 A V = -12V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.3 -0.55 -1.0 V V = V , I = -250A GS(th) DS GS D 26 32 V = -4.5V, I = -4.0A GS D Static Drain-Source On-Resistance - 31 45 m R V = -2.5V, I = -3.5A DS (ON) GS D 51 75 V = -1.8V, I = -2.7A GS D Forward Transfer Admittance - 12 - S Y V = -5V, I = -4A fs DS D Diode Forward Voltage - -0.6 - V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1291 - pF C iss V = -10V, V = 0V DS GS Output Capacitance C - 266 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 242 - pF rss Gate Resistnace R - 13 - V = 0V, V = 0V, f = 1.0MHz g DS GS SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge (V = -8V) Q - 23.7 - nC GS g Total Gate Charge (V = -4.5V) Q - 14.7 nC GS g V = -10V, I = -4A DS D Gate-Source Charge Q - 1.8 - nC gs Gate-Drain Charge - 4.6 - nC Q gd Turn-On Delay Time - 14 - ns t D(on) Turn-On Rise Time - 22 - ns t V = -10V, V = -4.5V, r DS GS Turn-Off Delay Time - 74 - ns R = 2.5, R = 3.0 t L G D(off) Turn-Off Fall Time t - 75 - ns f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 September 2012 DMP1045UFY4 Diodes Incorporated www.diodes.com Document number: DS31853 Rev. 7 - 2 NEW PRODUCT ADVANCE INFORMATION